Influence of Er3+ concentration in Er:GGAG crystal on spectroscopic and laser properties

Švejkar, Richard; Šulc, Jan; Boháček, P.; Němec, Michal; Jelı́nková, Helena; Trunda, Bohumil; Havlák, Lubomír; Nikl, M.; Jurek, K.

doi:10.1016/j.jallcom.2023.168964

Cited by 5 publications

(2 citation statements)

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“…This results in broadband absorption and emission of these systems preserving good thermal conductivity as it was previously demonstrated for Yb, Tm, and Er-doping. [9][10][11] All these properties give the potential for Ho:GGAG laser to high output power. Up to now, Ho:GGAG laser, resonantly pumped with Tm-fibre laser, was successfully demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Directly diode pumped cryogenically-cooled Ho:GGAG laser

Coubal,

Šulc,

Bohácek

et al. 2024

Solid State Lasers XXXIII: Technology and Devices

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The spectroscopy properties and lasing of directly diode pumped Ho-doped mixed gadolinium-gallium-aluminium garnet Gd 3 Ga 3 Al 2 O 12 (Ho:GGAG) single crystal in dependence on temperature were investigated for the first time. The crystal was grown by Czochralski method in a slightly oxidative atmosphere using an iridium crucible. The tested Ho:GGAG sample was cut from the grown crystal boule perpendicularly to growth direction (c-axis). For spectroscopy and laser experiments 9.8 mm thick plane-parallel face-polished plate (without AR coatings) with Ho-doping 1.26 at.% Ho/Gd was used. It was mounted in a temperature controlled cupreous holder, placed inside the vacuum chamber of the liquid nitrogen cryostat. The spectroscopy data, including absorption and emission spectra and upper laser level lifetime were measured in temperature range from 80 K up to room temperature. GaSb-based MIR laser diode (Dilas, BA-1908-1000-SE, power 1 W at 1908 nm) was used for longitudinal Ho:GGAG pumping. The laser diode was operating in the pulsed regime (20 ms pulse length, 20 Hz repetition rate) or CW regime. The 145 mm long semi-hemispherical laser resonator consisted of a flat pumping mirror

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Section: Introductionmentioning

confidence: 99%

Directly diode pumped cryogenically-cooled Ho:GGAG laser

Coubal,

Šulc,

Bohácek

et al. 2024

Solid State Lasers XXXIII: Technology and Devices

Self Cite

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“…Meanwhile, research into laser gain substances is still expanding. New gain stances such as Er:GGAG have been discovered [24][25][26]. There are still problems regar low optical to optical efficiency and serious thermal effects in the existing high sin pulse energy Er laser.…”

Section: Introductionmentioning

confidence: 99%

Development of the 2.7 μm to 3 μm Erbium-Doped Laser

Liu,

Gu,

Liu

et al. 2023

Crystals

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The 3 μm wavelength band laser is located on the strong absorption peak of water and the atmospheric transmission window. The 3 μm laser with high single pulse energy is used in medical treatment for cutting soft tissues and bones during surgery. It is used as a pump source for optical parametric oscillators, and Fe lasers can realize 3~5 μm or 8~14 μm laser output, which has an irreplaceable role in certain areas (e.g., optoelectronic countermeasures, LIDAR, atmospheric monitoring, etc.). Commercial semiconductor-pumped Er lasers are capable of achieving 3 μm laser output of 600 mJ with the maturation of a 970 nm semiconductor laser. The conversion efficiency is significantly improved. However, the energy is lower than a flash-lamp-pumped Er laser. There are still serious crystal thermal effects and an inefficient conversion process. In this paper, the energy-level systems of 3 μm Er-doped lasers are discussed. A summary of the current state of research on Er lasers using different matrices and the commercialization of Er-doped lasers with wavelengths ranging from 2.7 μm to 3 μm is also provided. Several technical means are given to enhance laser performance. Furthermore, the development of Er-doped solid-state lasers with wavelengths between 2.7 and 3 μm is envisaged in the near future.

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