Influence of epitaxy on the surface conduction of diamond film

Kasu, Makoto; Kubovič, M.; Aleksov, A.; Teofilov, N.; Taniyasu, Yoshitaka; Sauer, R.; Kohn, E.; Makimōto, Toshiki; Kobayashi, Naoki

doi:10.1016/j.diamond.2003.10.025

Cited by 72 publications

(19 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ratio corresponds to the boron concentration saturation value above 7 × 10 17 cm − 3 . The BE TO peak stands just before the decreasing of the peak energy value occurring above 2 × 10 18 cm − 3 [12][13][14]. These results are consistent with that obtained from the FTIR and the SIMS experiments.…”

Section: Resultssupporting

confidence: 90%

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Fernández‐Lorenzo

Araújo

Martin

et al. 2010

Diamond and Related Materials

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 90%

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Fernández‐Lorenzo

Araújo

Martin

et al. 2010

Diamond and Related Materials

View full text Add to dashboard Cite

“…This is because the source resistance of the FET is reduced by decreasing the source-gate gap from 1.4 to 0.5 µm. The drain bulk leakage and the gate current, which is often observed in FETs using a single-crystal CVD diamond [3], [10], were not observed in the polycrystalline FETs. There is a slight increase of drain-current due to the short-channel effect because a good pinch-off was observed in the case of 1-µm-gate FETs.…”

Section: Methodsmentioning

confidence: 83%

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

Ueda

Kasu

Yamauchi

et al. 2006

IEEE Electron Device Lett.

258

View full text Add to dashboard Cite

Using high-quality polycrystalline chemical-vapordeposited diamond films with large grains (∼ 100 µm), field effect transistors (FETs) with gate lengths of 0.1 µm were fabricated. From the RF characteristics, the maximum transition frequency f T and the maximum frequency of oscillation f max were ∼ 45 and ∼ 120 GHz, respectively. The f T and f max values are much higher than the highest values for singlecrystalline diamond FETs. The dc characteristics of the FET showed a drain-current density I DS of 550 mA/mm at gate-source voltage V GS of −3.5 V and a maximum transconductance g m of 143 mS/mm at drain voltage V DS of −8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.Index Terms-Field effect transistor (FET), hydrogen terminated, polycrystalline diamond, RF performance.

show abstract

“…A homoepitaxial layer used for the device fabrication was grown on type Ib single crystalline diamond crystals, followed by hydrogen termination to form a p-type conduction near the surface [2]. The surface conductivity of hydrogen terminated diamond has been used as channels in MESFET devices [3].…”

Section: Methodsmentioning

confidence: 99%