2004
DOI: 10.1016/j.diamond.2003.10.025
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Influence of epitaxy on the surface conduction of diamond film

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Cited by 72 publications
(19 citation statements)
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“…The ratio corresponds to the boron concentration saturation value above 7 × 10 17 cm − 3 . The BE TO peak stands just before the decreasing of the peak energy value occurring above 2 × 10 18 cm − 3 [12][13][14]. These results are consistent with that obtained from the FTIR and the SIMS experiments.…”
Section: Resultssupporting
confidence: 90%
“…The ratio corresponds to the boron concentration saturation value above 7 × 10 17 cm − 3 . The BE TO peak stands just before the decreasing of the peak energy value occurring above 2 × 10 18 cm − 3 [12][13][14]. These results are consistent with that obtained from the FTIR and the SIMS experiments.…”
Section: Resultssupporting
confidence: 90%
“…This is because the source resistance of the FET is reduced by decreasing the source-gate gap from 1.4 to 0.5 µm. The drain bulk leakage and the gate current, which is often observed in FETs using a single-crystal CVD diamond [3], [10], were not observed in the polycrystalline FETs. There is a slight increase of drain-current due to the short-channel effect because a good pinch-off was observed in the case of 1-µm-gate FETs.…”
Section: Methodsmentioning
confidence: 83%
“…A homoepitaxial layer used for the device fabrication was grown on type Ib single crystalline diamond crystals, followed by hydrogen termination to form a p-type conduction near the surface [2]. The surface conductivity of hydrogen terminated diamond has been used as channels in MESFET devices [3].…”
Section: Methodsmentioning
confidence: 99%