2020
DOI: 10.1021/acsami.0c01732
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Influence of Environment and Light-Stress on the Optoelectronic Properties of Triple-Cation Perovskite Thin Films

Abstract: In this work, we study the transport properties of triple-cation halide perovskite thin films and their evolution when exposed to air or vacuum and after light-soaking. Transport parameters were investigated by steady-state dark and photocurrent methods as well as by the steady-state photocarrier grating experiment (SSPG) from which the ambipolar diffusion length of thin film materials is estimated. Combined with other characterization measurements, such as photoluminescence and Fourier transform photocurrent … Show more

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Cited by 16 publications
(15 citation statements)
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“…The slope of this linear behavior gives a direct access to the product αk 2 . The absorption coefficient can be measured via other methods such as Fourier transform photocurrent spectroscopy [42,43] or ellipsometry [44]. Therefore, one can extract a direct measurement of the external radiative recombination rate k 2 .…”
Section: A the Drift-diffusion Modelmentioning
confidence: 99%
“…The slope of this linear behavior gives a direct access to the product αk 2 . The absorption coefficient can be measured via other methods such as Fourier transform photocurrent spectroscopy [42,43] or ellipsometry [44]. Therefore, one can extract a direct measurement of the external radiative recombination rate k 2 .…”
Section: A the Drift-diffusion Modelmentioning
confidence: 99%
“…[13][14][15] Unlike in Si or CdTe, HPs break down due to chemical reactions of the semiconductor with water, oxygen, and photoexcited electrons, 6,[16][17][18][19][20] and there exists a strong correlation between decay of optoelectronic properties such as carrier diffusion length and material transformation rate. 21,22 In oxygen and light, a photooxidationinduced degradation of MAPbI3 has been reported previously 19,23,24 and is widely believed to occur via a mechanism that involves superoxide radical (𝑂 2…”
Section: Introductionmentioning
confidence: 97%
“…[13][14][15] Unlike in Si or CdTe, HPs degrade due to chemical reactions of the semiconductor with water, oxygen, and photoexcited electrons, 6,[16][17][18][19][20] and there exists a strong correlation between decay of optoelectronic properties such as carrier diffusion length and material transformation rate. 21,22 In oxygen and light, a photooxidationinduced degradation of MAPbI3 has been reported previously 19,23,24 and is widely believed to occur via a mechanism that involves superoxide radical (𝑂 2…”
Section: Introductionmentioning
confidence: 97%