Previously, a model of copper deposition in the damascene process was proposed that takes into account the existence of a copper-accelerator complex as well as the competitive adsorption of an inhibitor and an accelerator. The model was verified experimentally by electrochemical impedance spectroscopy and dc voltammetry measurements on fresh solutions of a superfilling, copper deposition plating bath. In this paper, the same model was applied to plating baths during copper deposition where aging and possible relaxation of the bath back to a steady state can occur. The model can provide insight into interpreting the impedance spectra during and after copper deposition. Changes in the Cu-accelerator complex in the bulk solution and the surface coverage of this complex were followed using a parameter based on the low-frequency inductive loop of the electrochemical impedance spectra. Results indicate that the impedance spectroscopy measurements are mainly sensitive to Cu-accelerator complex formation and destruction.The damascene process for fabrication of copper on-chip metal interconnects requires electrodeposition into trenches or vias with width dimensions on the order of 130 nm or lower. To obtain voidfree deposits, superconformal deposition, or superfilling, is necessary. These terms refer to the occurrence of more rapid electrodeposition in the bottom of a trench or via than toward its entrance. Copper electroplating baths usually contain a mixture of H 2 SO 4 and CuSO 4 in concentrations close to 1.8 and 0.25 M, respectively, to which chloride ions are added in the range of 1 to 2 mM. However, superfilling is only obtained in the presence of a certain combination of additives in the electroplating bath, 1,2 including brighteners/ accelerators, carriers/suppressors, and levellers. Brighteners are usually propane sulfonic acid derivatives, either MPSA