Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation

Kalygina, V. M.; Tsymbalov, A. V.; Аlmaev, А. V.; Petrova, Yu. S.

doi:10.1134/s1063782621030118

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…Rise τ r and fall τ f times determined at the level of 0.9 and 0.1 respectively, do not exceed 1−2 s; 0.1 fall time τ f is (1−2) s (Fig. 7, b), which is better than the temporal parameters of UV detectors based on barrier structures with interdigital electrodes [11].…”

Section: Experimental Data and Discussionmentioning

confidence: 78%

Self-powered photo diodes based on Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs structures

et al. 2022

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The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of N_d=9.5·1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and conductance-voltage dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ=254 nm. When operating on a constant signal, the samples exhibit the properties of a photodiode and are able to work offline. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ=254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the oxide film. Keywords: MIS-structures, capacitance-voltage characteristics, volt-siemens characteristics, photocurrent, trap density.

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Section: Experimental Data and Discussionmentioning

confidence: 78%

Self-powered photo diodes based on Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs structures

et al. 2022

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“…6 shows the change in the diode conductivity with time when the UV is turned on and off at a voltage of 0.005 V. The response time τr and the recovery time τf, determined by the level of 0.9 and 0.1, respectively, do not exceed 1-2 seconds; the recovery time τf at the level of 0.1 is -(1-2) seconds (Fig. 6b), which is less than the time parameters of UV detectors based on barrier structures with interdigitated electrodes [11].…”

Section: Resultsmentioning

confidence: 89%

Self-powered Photodetectors based on the Ga2O3/n-GaAs

Kalygina¹,

Kisleleva²,

Kushnarev³

et al. 2022

8th International Congress on Energy Fluxes and Radiation Effects

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The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by RF-magnetron sputtering on n-GaAs epitaxial layers with a concentration of Nd = 9.5ˑ1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and voltage-siemens dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. The samples exhibit the properties of a photodiode and are able to work offline when operating on a constant signal. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the bulk of the oxide film.

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“…Время отклика τ r и время восстановления τ f , определенные по уровню 0.9 и 0.1 соответственно, не превышают 1−2 с; время восстановления τ f по уровню 0.1 составляет -(1−2) с (рис. 7, b), что меньше временн ых параметров УФ детекторов на основе барьерных структур со встречно-штырьевыми электродами [11].…”

Section: экспериментальные данные и обсуждениеunclassified

Фотодиоды на основе структур Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs, способные работать в автономном режиме

Калыгина¹,

Киселева²,

Кушнарев³

et al. 2022

Физика И Техника Полупроводников

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The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of Nd = 9.5ˑ1014 cm–3 concentration. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and conductance-voltage dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. When operating on a constant signal, the samples exhibit the properties of a photodiode and are able to work offline. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the oxide film.

show abstract

Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation

Cited by 4 publications

References 21 publications

Self-powered photo diodes based on Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs structures

Self-powered photo diodes based on Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs structures

Self-powered Photodetectors based on the Ga2O3/n-GaAs

Фотодиоды на основе структур Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs, способные работать в автономном режиме

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