Influence of electric field intensity on the copper catalyst-mediated crystallization of amorphous silicon

Abstract

Articles you may be interested inIsolated catalyst sites on amorphous supports: A systematic algorithm for understanding heterogeneities in structure and reactivityThe effects of electric field intensity on the crystallization of amorphous silicon ͑a-Si͒ using the field-aided lateral crystallization ͑FALC͒ process have been studied in the range of 0-180 V/cm. The crystallization velocity increases as the electric field intensity increases. Moreover, the better quality of polycrystalline silicon resulted in the films that crystallized faster. The activation energy of the metal-induced lateral crystallization process calculated from the Arrhenius plot is 1.79 eV ͑Ϯ0.03 eV͒, whereas that of the FALC process is 1.65 eV ͑Ϯ0.04 eV͒ regardless of the electric field intensities. It is also shown that the electric field affects both the enhancement of the preexponential factor in the Arrhenius equation and the decrease in the energy barrier height for the crystallization. In particular, the effect is almost the same in the temperature range of 400-500°C. The increase in the crystallization velocity is attributed to the field-enhanced diffusion of copper ions in the Cu 3 Si crystallization mediator and the amorphous Si.

Surface Morphology of SiN Film Deposited by a Pulsed-Plasma Enhanced Chemical Vapor Deposition at Room Temperature

“…This formula is frequently utilized in calculating a nonuniformity of plasma or film characteristics. 9 The calculated nonuniformity is shown in Figure 6. As shown in Figure 6, the nonuniformtiy variation with the duty cycle is quite complex depending on powers.…”

Etching characteristics and plasma-induced damage of Ba0.65Sr0.35TiO3 thin films etched in CF4/Ar/O2 plasma

“…Among those technologies, MERIE system has shown high etch rate and good selectivity performance for etching BST films because of the presence of relatively intensive magnetic field and the high density plasma at low pressure. Until now, there are several works devoted to an investigation of the etching properties for BST films using various chlorine-based and/or fluorinebased plasmas [5,[8][9][10]. Kim et al [5] reported the etching characteristics and mechanism of BST films using CF 4 /Cl 2 / Ar and BCl 3 /Cl/Ar gas mixtures in an ICP system.…”

“…Until now, there are several works devoted to an investigation of the etching properties for BST films using various chlorine-based and/or fluorinebased plasmas [5,[8][9][10]. Kim et al [5] reported the etching characteristics and mechanism of BST films using CF 4 /Cl 2 / Ar and BCl 3 /Cl/Ar gas mixtures in an ICP system. Shibano et al [8] observed the etching behaviors of BST films using Cl 2 with Cl 2 plasma, and showed that the chemical enhancement in BST etching was related to the existence of titanium in the films.…”

“…In order to accomplish the integration of these devices, the etching process for BST films must be developed. Several techniques have been used for etching BST films: wet chemical etching, reactive ion etching (RIE), magnetically enhanced reactive ion etching (MERIE), inductively coupled plasma (ICP) etching, electron cyclotron resonance (ECR) etching, helicon wave plasma (HWP) etching, and reactive ionbeam etching (RIBE) [4][5][6][7][8]. Among those technologies, MERIE system has shown high etch rate and good selectivity performance for etching BST films because of the presence of relatively intensive magnetic field and the high density plasma at low pressure.…”

Comparison of crystallization kinetics in a-Si∕Cu and a-Si∕Al bilayer recording films under thermal annealing and pulsed laser irradiation

“…11 For the a-Si/ Cu bilayer, the crystallization of a-Si induced by a Cu metal layer can be simplified into three stages. 12,13 The first stage is the formation of copper silicide by means of the reaction between Cu and a-Si. The second stage is the formation of crystalline Si ͑c-Si͒ in the Cu 3 Si matrix.…”