2000
DOI: 10.1016/s0022-3093(99)00913-8
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Influence of electric field distortion and i-layer quality on the collection function of drift-driven a-Si:H solar cells

Abstract: A re®ned analytical model describing the photocurrent collection in amorphous silicon solar cells is presented. Thereby, variations of the electric ®eld within the intrinsic layer are formally taken into account and it is shown that they can be summarized in a Ôform factorÕ, u, which reduces the e ective mobility recombination time product of the interior. Based on this model an experimental technique is introduced which aims to determine the transport quality of the intrinsic layer of amorphous silicon solar … Show more

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Cited by 9 publications
(5 citation statements)
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References 6 publications
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“…The charge transport in organic BHJ cells and conventional pin cells relies on the same device architecture, namely a built‐in electric field along the absorber, which facilitates the extraction of low mobility carriers. Since several analytical models have been proposed to describe the JV characteristics of inorganic pin type diodes and solar cells 55–59, it is reasonable to apply them to BHJ cells taking into account the particularities of the organic semiconductors. Next, we adapt two of these models to BHJ cells with exponential density of states in the mobility gap.…”
Section: Short Circuit Current Vs Thickness Dependencementioning
confidence: 99%
“…The charge transport in organic BHJ cells and conventional pin cells relies on the same device architecture, namely a built‐in electric field along the absorber, which facilitates the extraction of low mobility carriers. Since several analytical models have been proposed to describe the JV characteristics of inorganic pin type diodes and solar cells 55–59, it is reasonable to apply them to BHJ cells taking into account the particularities of the organic semiconductors. Next, we adapt two of these models to BHJ cells with exponential density of states in the mobility gap.…”
Section: Short Circuit Current Vs Thickness Dependencementioning
confidence: 99%
“…Microscopic structure and solar cell performance in hydrogenated mixed-phase thin film silicon solar cells were studied by AFM and c-AFM [18]. The coplanar transport property in nc-Si:H related to the size of nanocrystal conglomerates was also revealed by A. Shah group through AFM observations [19]. M. Teska has studied AFM and STM investigations of topography and barrier heights of hydrogenated amorphous silicon [20].…”
Section: Characterizationsmentioning
confidence: 99%
“…In equation (1), J is the current density, V is the applied voltage, J 0 is the reverse saturation current density, q is the elementary charge, n is the diode ideality factor, k B is the Boltzmann constant, T is the absolute temperature, R S is the series resistance, R Sh is the shunt resistance, J ph is the photogenerated current density, and J rec represents an additional loss term of J ph in the active layer, which increases significantly with the forward voltage. The J rec has been considered in the solar cells which consist of disordered materials, such as amorphous silicon solar cells [20,24,25] or organic solar cells [23]. Without light illumination (J ph and J rec =0), the diode characteristics including J 0 , n, R S , and R Sh can be estimated (evaluated parameters are summarized in table 2).…”
Section: Solar Cell Performances With Surface Modified Cdse Qdsmentioning
confidence: 99%
“…We carried out incident light intensity dependent J-V measurements of the devices and analyzed the collection voltage (V C ) [20,23,25] and J SC [30,31] to further investigate carrier recombination and the collection characteristics of solar cells with different ligand exchange/elimination procedures.…”
Section: Light Intensity Dependent Solar Cell Characteristicsmentioning
confidence: 99%
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