Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots

Kupka, I.; Lehmann, Toni; Trempa, M.; Kranert, C.; Reimann, C.; Friеdrich, J.

doi:10.1016/j.jcrysgro.2017.02.039

Cited by 20 publications

(2 citation statements)

References 22 publications

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“…The strength of the chemical reaction affects the dislocation density and grain boundary. [51,52] The oxygen, nitrogen, and carbon defects are given below.…”

Section: Chemical Reactionsmentioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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“…The strength of the chemical reaction affects the dislocation density and grain boundary. [51,52] The oxygen, nitrogen, and carbon defects are given below.…”

Section: Chemical Reactionsmentioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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“…The main aspect was to provide foreign nucleating agents at the crucible bottom and to solidify the silicon melt directly on them to achieve the fine‐grained HPM structure. It turned out that the alternative nucleation methods developed at IISB provide good perspectives to replace the classical seeding on a silicon feedstock particle layer in order to reduce the production costs and to increase the yield of high‐quality HPM silicon wafers …”

Section: Growth Of Photovoltaic Materialsmentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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Materials Chemistry and Physics for Low‐Cost Silicon Photovoltaics

Jiang

2018

Emerging Photovoltaic Materials

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Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots

Cited by 20 publications

References 22 publications

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Materials Chemistry and Physics for Low‐Cost Silicon Photovoltaics

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