Influence of deposition temperature on structural and ferroelectric properties of Bi4Ti3O12 thin films

Iljinas, Aleksandras; Stankus, Vytautas

doi:10.1016/j.apsusc.2016.03.056

Cited by 12 publications

(4 citation statements)

References 29 publications

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“…This parameter seems to be very sensitive to the substrate temperature even at a low temperature. This behavior of the Bismuth sticking coefficient has already been observed on other Bi‐based materials like GaSbBi, BSCO, BiFeO 3 , or Bi 4 Ti 3 O 12 deposited by MBE 27–30 and rf sputtering 31–33 . It is important to note that at these low temperatures, the sticking coefficients of the other elements (Ti and Na) were not affected.…”

Section: Resultssupporting

confidence: 74%

Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering

2021

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(Bi0.5Na0.5)TiO3 thin film growth by ex situ sputtering has been investigated and reported in this paper. An original approach, based on the growth process, was used in order to precisely control the film composition, which has never been reported in BNT growth. The bismuth content in the films and so the composition of amorphous sputtered films was controlled by a slight heating of the substrate during the growth (150–240°C). Then, films were crystallized, obviously without any change in composition, by a post‐annealing treatment. More precisely, without substrate heating and using a stoichiometric target, the film presents an excess of Bi but when it is deposited at 200°C the film becomes stoichiometric. It was shown that the sticking coefficient of Bi is particularly sensitive even at low substrate temperatures, whereas Na and Ti sticking coefficients are not impacted. Followed by a post‐annealing in air at 650°C, the composition of the amorphous BNT films deposited at 200°C remains stoichiometric and the film exhibits a high (100) preferred orientation in a pure perovskite phase and a dense microstructure. The evaluation of the electrical properties as a function of the Bi content in the film, adjusted by the deposition temperature, shows a strong impact on the ferroelectric properties where the best performances were obtained with the stoichiometric BNT film deposited at 200°C.

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Section: Resultssupporting

confidence: 74%

Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering

2021

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“…ρSiO 2 and Vt-SiO 2 %, respectively, represent the density of silicon dioxide and the volume fraction of composite materials [17]. PPE and Vt-PE% represent the density of polyethylene and the volume fraction of composite materials.…”

Section: Density Test and Porositymentioning

confidence: 99%

Tang Sancai Cultural and Creative Product Design Based on Bi4Ti3O12 Ferroelectric Nanomaterials

Wang

Zhang

2022

Advances in Materials Science and Engineering

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Nano has its small size and specific characteristics that are different from other materials, bringing a climax to the world’s on-site nano research and material development. In the ceramic industry, the nanometer is an important research object in the ceramic industry. This article aims to study nanomaterials and their application in Tang Sancai. The experiment in this paper shows from the Table that the sales volume of nanotechnology used in 2016-1020 is getting higher and higher, from 35.35 million yuan in 2016 to 10.43 million yuan in 2020, while the sales volume of ceramics that do not use nanotechnology has increased from 3567 in 2016. Ten thousand yuan has become 26.32 million yuan in 2020. It can be seen that ceramics using nanotechnology are more popular.

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“…Furthermore, the grain density is influenced by nucleation centers and the surface migration of adsorbed atoms. With an increase in the number of spin-coating layers, i.e., an increase in thickness, the surface diffusion of adsorbed atoms is restricted, and the density of nucleation centers increases, resulting in a more uniform distribution of particle aggregation, and as the width of the rod increases, it is easier for them to make contact with each other, which also leads to the smaller width of the grain during the growth process [31]. The cross-sectional images in Figure 2e-h depict thin films with varying layer counts.…”

Section: Resultsmentioning

confidence: 99%

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Yue,

Cai,

Guo

et al. 2024

Ceramics

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The pursuit of low-power/low-voltage operation in devices has prompted a keen interest in the mesoscale effects within ferroelectric thin films. The downsizing of ferroelectrics can significantly influence performance; for instance, the remanent polarization and coercive field are susceptible to alterations based on thickness. In this study, randomly oriented Bi3.25La0.75Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates using the sol–gel method, and SEM observations revealed rod-like grains in all thin films. The investigation delved into the correlation between dielectric and ferroelectric properties with thin film thickness. The thin film exhibited an increased remanent polarization and a reduced coercive electric field. Additionally, the ferroelectric domain structure was scrutinized through PFM, and the resistor properties of the BLT4 thin film were studied, which shows the potential of BLT thin films in non-volatile memory and memristor.

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Influence of deposition temperature on structural and ferroelectric properties of Bi4Ti3O12 thin films

Cited by 12 publications

References 29 publications

Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering

Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering

Tang Sancai Cultural and Creative Product Design Based on Bi4Ti3O12 Ferroelectric Nanomaterials

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

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