“…These peaks along (100), (110), (200), (210), and (211) belong to crystalline BaTiO 3 with a tetragonal phase, while the peaks along (006) and (114) planes indeed belong to hexagonal BaTiO 3 . A small shift in diffraction angles of the XRD peaks of the nanostructured films compared to the bulk is due to the presence of stacking fault 24 , 25 . Figure 2 X-ray diffraction patterns of BaTiO 3 powder and BaTiO 3 nanostructure deposited at various substrate temperatures.…”
In this study, the pulsed laser deposition (PLD) method was employed to fabricate nanostructured BaTiO3 films on glass and silicon substrates at varying temperatures. The structural analysis confirmed the formation of crystalline nanostructured BaTiO3 with mixed tetragonal and hexagonal phases, and the film deposited at 150 °C has the best crystallinity and largest particle size. The optical energy gap of the BaTiO3 nanostructure decreases from 3.94 to 3.84 eV, with increasing substrate temperature from 60 to 150 °C. Photoluminescence spectra of BaTiO3 films deposited at 25, 60, 100, and 150 °C exhibit emission peaks centered at 450, 512, 474, and 531 nm, respectively. Raman spectra of BaTiO3 films show E (LO), A (TO), E (LO) + TO, and B1 vibration modes. Hall measurements reveal that the mobility of the BaTiO3 film increases with temperature up to 100 °C and then decreases at 150 °C. The current–voltage characteristics of the BaTiO3/p-Si heterojunction, deposited over a temperature range of 25 to 150 °C, were investigated in the dark and under illumination. The heterojunctions exhibit rectifying properties, with the best rectification factor observed for the heterojunction prepared at 100 °C. The values of the ideality factor for the heterojunctions fabricated at 25, 60, 100, and 150 °C were 4.3, 3.8, 2.8, and 5, respectively. The study reveals an improvement in both the figures of merit and the photodetector performance with increased substrate temperature. The responsivity increases from 2.2 to 9.25 A/W as the deposition temperature rises from 25 to 100 °C. The detectivity (D*) and external quantum efficiency (EQE) of the photodetector prepared at the optimum substrate temperature of 100 °C, were found to be 4.62 × 1012 Jones and 114%, respectively, at 500 nm.
“…These peaks along (100), (110), (200), (210), and (211) belong to crystalline BaTiO 3 with a tetragonal phase, while the peaks along (006) and (114) planes indeed belong to hexagonal BaTiO 3 . A small shift in diffraction angles of the XRD peaks of the nanostructured films compared to the bulk is due to the presence of stacking fault 24 , 25 . Figure 2 X-ray diffraction patterns of BaTiO 3 powder and BaTiO 3 nanostructure deposited at various substrate temperatures.…”
In this study, the pulsed laser deposition (PLD) method was employed to fabricate nanostructured BaTiO3 films on glass and silicon substrates at varying temperatures. The structural analysis confirmed the formation of crystalline nanostructured BaTiO3 with mixed tetragonal and hexagonal phases, and the film deposited at 150 °C has the best crystallinity and largest particle size. The optical energy gap of the BaTiO3 nanostructure decreases from 3.94 to 3.84 eV, with increasing substrate temperature from 60 to 150 °C. Photoluminescence spectra of BaTiO3 films deposited at 25, 60, 100, and 150 °C exhibit emission peaks centered at 450, 512, 474, and 531 nm, respectively. Raman spectra of BaTiO3 films show E (LO), A (TO), E (LO) + TO, and B1 vibration modes. Hall measurements reveal that the mobility of the BaTiO3 film increases with temperature up to 100 °C and then decreases at 150 °C. The current–voltage characteristics of the BaTiO3/p-Si heterojunction, deposited over a temperature range of 25 to 150 °C, were investigated in the dark and under illumination. The heterojunctions exhibit rectifying properties, with the best rectification factor observed for the heterojunction prepared at 100 °C. The values of the ideality factor for the heterojunctions fabricated at 25, 60, 100, and 150 °C were 4.3, 3.8, 2.8, and 5, respectively. The study reveals an improvement in both the figures of merit and the photodetector performance with increased substrate temperature. The responsivity increases from 2.2 to 9.25 A/W as the deposition temperature rises from 25 to 100 °C. The detectivity (D*) and external quantum efficiency (EQE) of the photodetector prepared at the optimum substrate temperature of 100 °C, were found to be 4.62 × 1012 Jones and 114%, respectively, at 500 nm.
“…Among the solution based routes such as dip coating, 35 spin coating, 36 hydrothermal, 37 and chemical bath deposition (CBD), 38 CBD can be used to grow SnS 2 nanostructures in a time efficient and inexpensive way at low temperature for large scale, uniform, reproducible film production. 39 Though CBD synthesized SnS 2 nanostructure based photodetectors have been reported by Khimani et al 40 and Fang et al, 41 use of bare and FTO coated glass substrates, respectively, therein again become a source of electronic waste for industry. We anticipate a unique combination of filter paper as a substrate with CBD grown SnS 2 nanostructured film as active material offers the opportunity not only to fabricate a biodegradable eco-friendly photodetector but also to have a low-cost, large-scale production.…”
We breathe in a world where growing electronic wastages are a serious threat to our ecosystem, and therefore biodegradable devices are more in demand. We have unprecedentedly demonstrated broad-band low-intensity photodetection by SnS 2 two-dimensional (2D) nanosheet (NS) array film grown on Whatman filter paper based biodegradable substrate. Phase pure SnS 2 2D NS array film has been obtained using a low-cost facile chemical bath deposition technique as confirmed by X-ray diffractometry, X-ray photoelectron spectroscopy, and field emission scanning electron microscopy. Unprecedentedly, these biodegradable substrates based SnS 2 NS array films can detect lights of wavelengths of 400 and 500 nm with photoresponsivity values of 6.31 and 10.22 mA/W, respectively. Uniquely, the SnS 2 NS array film also detects very low-intensity lights of 43 μW/cm 2 (400 nm) and 42 μW/cm 2 (500 nm) with photoresponsivity values of 15.87 and 20.24 mA/W with detectivity values of 3.04 × 10 10 and 3.88 × 10 10 jones, respectively. Very stable broad-band photoresponse under successive illumination conditions has also been demonstrated. Collated experimental data support a photoresponse mechanism involving defect levels. This filter paper based photoactive SnS 2 2D-NS array film can be applied to fabricate biodegradable low-intensity broad-band photodetector devices.
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