Influence of defects on the order-disorder phase transition of a Si(001) surface

Nakamura, Yoshimichi; Kawai, Hiroshi; Nakayama, Minoru

doi:10.1103/physrevb.55.10549

Cited by 32 publications

(16 citation statements)

References 14 publications

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“…These results are in good agreement with experimental evidence that show that the GeH 3 radical dissociates into GeH 2 plus a H atom. It also shows the same trend observed in the adsorption of SiH 4 on the Si(0 0 1) surface [6,7] …”

Section: Geh 2 +2h Subunitssupporting

confidence: 68%

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First principles total energy calculations of the adsorption of germane and digermane on Si(001)-c(2×4)

Sánchez-Castillo

Cocoletzi

Takeuchi³

2003

Surface Science

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Section: Geh 2 +2h Subunitssupporting

confidence: 68%

“…At low temperatures the reconstruction is of periodicity c(2 · 4), which transforms into a structure of periodicity (2 · 1) when the temperature is increased [5][6][7]. Recent ab initio calculations [8] have been performed to investigate the adsorption of GeH 2 on Si(0 0 1)-(2 · 1).…”

Section: Introductionmentioning

confidence: 99%

First principles total energy calculations of the adsorption of germane and digermane on Si(001)-c(2×4)

Sánchez-Castillo

Cocoletzi

Takeuchi³

2003

Surface Science

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mentioning

confidence: 68%

“…For example, the anticipated second-order phase transition on a Si(100) surface from a ͑2 3 1͒ to a c͑4 3 2͒ structure is not sharp [8]. This behavior was qualitatively reproduced by Monte Carlo simulations based on an Ising spin model [9,10], in which the intrinsic dimer defect concentration (1%) on the surface was taken into account. Interestingly, a system consisting of the ideal Si(100) surface and defects is equivalent to an Ising spin system with a random magnetic field [9].…”

mentioning

confidence: 73%

Two-Dimensional Phase Transition Mediated by Extrinsic Defects

et al. 1999

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We have investigated the ͑ p 3 3 p 3 ͒ to ͑3 3 3͒ phase transition in the a phase of Sn͞Ge(111) with variable temperature STM at temperatures between 30 and 300 K. Point defects in the Sn film stabilize localized regions of the ͑3 3 3͒ phase, where the size is characterized by a temperature dependent length (exponential attenuation). The inverse of the attenuation length is a linear function of temperature showing that the phase transition occurs at 70 K. At low temperature a density wave mediated defect-defect interaction realigns the defects to be in registry with the ͑3 3 3͒ domains.Structural phase transitions belong to a group of phenomena, which are strongly related to surface symmetry and its lowering. In many cases a prediction of the order and universality class of an anticipated phase transition can be made based solely on the knowledge of the space group of the surface or adsorbate structure [1]. This idealized picture is rarely achieved in the real world, where defects and imperfections in the surface break the symmetry. Various types of surface phase transitions have been reported in the literature [2,3], and even though an atomistic picture of the phase nucleation process has remained elusive, it is generally believed that this process involves defects and impurities [4,5]. Since the energy differences between different phases on a surface are usually very small, a slight perturbation of this energy balance, coupled with the broken symmetry induced by an imperfection, can affect not only the transition temperature but also the temperature dependence of the order parameters near the critical point. For example, consider a system with a charge density wave (CDW) instability. Electrons in the normal state will screen charged impurities, producing an attenuated CDW or Friedel oscillation near the impurity sites. The ion cores follow the local charge rearrangement and, consequently, the normal-state symmetry is broken locally and short-range CDW order develops. The electronic response to the external perturbation [6], x͑q, T ͒, depends on the temperature, leading to the intriguing proposition that defects will in general affect the evolution of long-range ordering. Tosatti and Anderson concluded that "a CDW can be regarded as unattenuated Friedel oscillations" [7].There is indeed evidence that imperfections have a strong influence on surface phase transitions. For example, the anticipated second-order phase transition on a Si(100) surface from a ͑2 3 1͒ to a c͑4 3 2͒ structure is not sharp [8]. This behavior was qualitatively reproduced by Monte Carlo simulations based on an Ising spin model [9,10]

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“…In particular, ␤ =1/8, = 1, and ␥ =7/4 are predicted for the 2-D Ising model and ␤ =1/9, =5/6, and ␥ = 13/ 9 for the threestate Potts' one. 26 From an experimental point of view, the determination of the critical exponents from the study of the diffraction peaks is often hindered because of the smearing of the phase transitions at T c due to finite size effects [27][28][29] and point defects, 30,31 so that power law behaviors are hardly observed for more than one decade in the logarithm of the reduced temperature. Moreover, an accurate analysis of the order parameter intensity behavior is complicated by the concurrent attenuation due to the Debye-Waller thermal fluctuations.…”

Section: B Critical Behaviormentioning

confidence: 99%

Displacive phase transition at the5∕3monolayer of Pb on Ge(001)

et al. 2005

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At a coverage of 5 / 3 monolayer ͑ML͒, Pb adsorbed on Ge͑001͒ forms a ground phase displaying a ͑ 2 1 0 6 ͒ symmetry. This phase undergoes two reversible phase transitions ͑ 2 1 0 6 ͒ ↔ ͑ 2 1 0 3 ͒ ↔ ͑2 ϫ 1͒ at the critical temperatures T c 1 ϳ 178 K and T c 2 ϳ 375 K, respectively. We investigated the behavior of the relevant order parameters at the critical temperatures by means of He and in-plane x-ray diffraction ͑HAS and XRD, respectively͒. Both phase transitions at the critical temperature put in evidence a clear order-disorder behavior, in agreement with the universality class expected for the corresponding symmetry group transformation. The low-temperature transition yields the critical exponent of the two-dimensional ͑2-D͒ Ising universality class, whereas the three-state Potts' critical exponents are found for the high-temperature transition. By out-of-plane XRD measurements, the low-temperature phase transition is observed to be accompanied by a static surface distortion at room temperature. A complementary HAS study of the temperature evolution of the surface charge corrugation reveals that the complete ͑ 2 1 0 6 ͒ ↔ ͑ 2 1 0 3 ͒ transition is of the displacive type. On the contrary, the high-temperature phase transition does not show any change of the surface corrugation up to its irreversible decomposition, thus pointing to a pure order-disorder character.

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Influence of defects on the order-disorder phase transition of a Si(001) surface

Cited by 32 publications

References 14 publications

First principles total energy calculations of the adsorption of germane and digermane on Si(001)-c(2×4)

First principles total energy calculations of the adsorption of germane and digermane on Si(001)-c(2×4)

Two-Dimensional Phase Transition Mediated by Extrinsic Defects

Displacive phase transition at the5∕3monolayer of Pb on Ge(001)

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