Influence of damp heat on the electrical properties of Cu(In,Ga)Se 2 solar cells

Schmidt, M.; Braunger, D.; Schäffler, R.; Schock, H.W.; Rau, Uwe

doi:10.1016/s0040-6090(99)00820-2

Cited by 52 publications

(32 citation statements)

References 5 publications

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“…There are many contributions influencing ∆E, some of which will be discussed later. Cells exposed to the DH environment show a continuous shift of the activation energy and capture crosssection of the interface state β proportional to the exposure time [14,15]. The main part of this shift proved to be irreversible.…”

Section: Interface Defect Statesmentioning

confidence: 99%

“…Note that in co-evaporated CuInSe 2 -based cells, the defect state ζ , also referred to as N2, is present with high concentration already in the as-grown state, such that it can easily be detected using admittance spectroscopy [27]. In that cell type, its concentration is proportional to the time elapsed under DH conditions [14].…”

Section: Bulk Defect Statesmentioning

confidence: 99%

“…The method of extrapolating the opencircuit voltage to T = 0 K, applied in earlier publications [14,15] in order to determine the major recombination path, yielded the absorber bandgap energy, thus, in principle, indicating predominant recombination in the space charge region. For verification, we used SCAPS to calculate the temperature-dependent open-circuit voltages for two hypothetical sample definitions, one with bulk traps only, and the other with only interface defect states (uniform energy distribution).…”

Section: Numerical Simulationsmentioning

confidence: 99%

“…However, the shift of the interface defect state β , observed after DH exposure [14,15,18] and air annealing [27], does not only stem from changes of the interface, but is also influenced by the window and absorber bulk regions (doping concentration, defect state concentration) as well. Consequently, the band bending of the heterojunction and the type inversion at the absorber surface are diminished.…”

Section: Window/absorber Interfacementioning

confidence: 99%

“…Schmidt et al [14] measured an acceptor-like defect state called N2, which is present in their as-grown co-evaporated samples in relatively high concentration, as it can be measured with admittance spectroscopy. They correlated the concentration of this defect state (estimated with a calculation by Walter et al [43] based on their admittance data) with the open-circuit voltage of their devices.…”

Section: Absorber Layermentioning

confidence: 99%

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Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)₂/Mo Heterojunction Solar Cells

Deibel

Dyakonov

Parisi

2003

Zeitschrift Für Naturforschung A

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The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se) 2 /Mo are investigated. Encapsulated modules were shown to be stable against water vapor and oxygen under outdoor conditions, whereas the fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subjected non-encapsulated test cells to extended damp heat exposure at 85 • C ambient temperature and 85% relative humidity for various time periods (6 h, 24 h, 144 h, 294 h, and 438 h). In order to understand the origin of the pronounced changes of the cells, we applied temperature-dependent current-voltage and capacitancevoltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observed the presence of electronic defect states which show an increasing activation energy due to damp heat exposure. The corresponding attempt-to-escape frequency and activation energy of these defect states obey the Meyer-Neldel relation. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se) 2 surface. We also observed changes in the bulk defect spectra due to the damp-heat treatment. -PACS: 73.20.hb, 73.61.Le

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Section: Interface Defect Statesmentioning

confidence: 99%

Section: Bulk Defect Statesmentioning

confidence: 99%

Section: Numerical Simulationsmentioning

confidence: 99%

Section: Window/absorber Interfacementioning

confidence: 99%

Section: Absorber Layermentioning

confidence: 99%

See 3 more Smart Citations

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)₂/Mo Heterojunction Solar Cells

Deibel

Dyakonov

Parisi

2003

Zeitschrift Für Naturforschung A

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X-Ray Emission Spectroscopy of Cu(In,Ga)(S,Se)2-Based Thin Film Solar Cells: Electronic Structure, Surface Oxidation, and Buried Interfaces

Heske

Groh

Fuchs

et al. 2001

phys. stat. sol. (a)

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The electronic and chemical structure of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film surfaces and of relevant interfaces in CIGSSe-based thin film solar cells is investigated with a combination of X-ray emission spectroscopy (XES) and photoelectron spectroscopy. Examples of sulfur L 2,3 XES spectra of CdS and CIGSSe are discussed in view of resonant excitation, surface oxidation, and chemical bonding. The combination of the two techniques proves to be a powerful tool to identify spectral features correlated to certain chemical states or bonds. By monitoring these features in interface formation sequences, chemical and electronic information about buried interfaces can be obtained, which will be discussed in detail for the ZnO/CIGSSe interface. The experimental results provide valuable information on the CIGSSe surface and the ZnO/CIGSSe interface and, in general, demonstrate some of the spectroscopic advantages of X-ray emission spectroscopy.

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References

2011

Chalcogenide Photovoltaics

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Influence of damp heat on the electrical properties of Cu(In,Ga)Se 2 solar cells

Cited by 52 publications

References 5 publications

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)₂/Mo Heterojunction Solar Cells

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)₂/Mo Heterojunction Solar Cells

X-Ray Emission Spectroscopy of Cu(In,Ga)(S,Se)2-Based Thin Film Solar Cells: Electronic Structure, Surface Oxidation, and Buried Interfaces

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Influence of damp heat on the electrical properties of Cu(In,Ga)Se 2 solar cells

Cited by 52 publications

References 5 publications

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Heterojunction Solar Cells

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Heterojunction Solar Cells

X-Ray Emission Spectroscopy of Cu(In,Ga)(S,Se)2-Based Thin Film Solar Cells: Electronic Structure, Surface Oxidation, and Buried Interfaces

References

Contact Info

Product

Resources

About

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)₂/Mo Heterojunction Solar Cells

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)₂/Mo Heterojunction Solar Cells