Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals

Abstract

The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities.

Electron-hole trapping centers in uv-irradiated Na2SO4-Mnand K2SO4-Mn

“…The other three excitation bands at 2.4 eV, 2.93 eV, and 3.1 eV are related to impurity and intrinsic electron-hole trapping centers localized near the impurity Mn + . In our previous works [7] in the Na2SO4-Cu crystal, recombination emission bands corresponding to the intrinsic SO4 3--SO4at 3.0-3.1 eV and impurity Cu 0 -SO4 trapping centers at 3.17 eV.…”

Electron-hole trapping centers in Na2SO4 with a transition metal impurity Mn

“…The mechanisms of the formation and decay of electron-hole pairs in undoped sulfates of alkali and alkaline earth metals are described in detail in [10][11][12][13][14][15]. In this work, the mechanisms of formation of electron-hole pairs in Na 2 SO 4 doped with the transition metal Mn are investigated.…”