Influence of Cu doping on optical properties of (Cd–Zn)S nanocrystalline thin films: a review

Lilhare, Devjyoti; Sinha, Tarkeshwar; Khare, Ayush

doi:10.1007/s10854-017-7963-6

Cited by 7 publications

(6 citation statements)

References 144 publications

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“…Several research groups have reported that Cu 3d states were just above the valence band [24,32,33], while others claimed that Cu 3d orbitals were close to the conduction band [34]. The different positions of Cu 3d energy levels within the forbidden band will lead to very different recombination mechanisms of Cu impurity emission [32,35]. Thus far, it is unknown how the position of Cu 3d states varies with the dopant location in QDs either.…”

Section: Introductionmentioning

confidence: 99%

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots

Zhao

et al. 2021

Nanomaterials

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The photophysical properties of Cu-doped CdSe quantum dots (QDs) can be affected by the oxidation state of Cu impurity, but disagreement still exists on the Cu oxidation state (+1 or +2) in these QDs, which is debated and poorly understood for many years. In this work, by using density functional theory (DFT)-based calculations with the Heyd–Scuseria–Ernzerhof (HSE) screened hybrid functional, we clearly demonstrate that the incorporation of Cu dopants into the surface of the magic sized Cd33Se33 QD leads to non-magnetic Cu 3d orbitals distribution and Cu+1 oxidation state, while doping Cu atoms in the core region of QDs can lead to both Cu+1 and Cu+2 oxidation states, depending on the local environment of Cu atoms in the QDs. In addition, it is found that the optical absorption of the Cu-doped Cd33Se33 QD in the visible region is mainly affected by Cu concentration, while the absorption in the infrared regime is closely related to the oxidation state of Cu. The present results enable us to use the doping of Cu impurity in CdSe QDs to achieve special photophysical properties for their applications in high-efficiency photovoltaic devices. The methods used here to resolve the electronic and optical properties of Cu-doped CdSe QDs can be extended to other II-VI semiconductor QDs incorporating transition-metal ions with variable valence.

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Section: Introductionmentioning

confidence: 99%

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots

Zhao

et al. 2021

Nanomaterials

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“…Hence, the depth of the window layer should be in an optimum range for enrichment of the performance of a cell as well as assuaging the production cost. [ 44 ]…”

Section: Resultsmentioning

confidence: 99%

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

2023

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Herein, AgInSe2 absorber–based n‐In2S3/p‐AgInSe2/p+‐molybdenum disulfide heterojunction thin‐film solar device is numerically explored with the help of SCAPS‐1D software. The major focus of this numerical study is to inquire the performances of the purported solar cell and hence unearth the highest efficiency of the AgInSe2 (AISe) solar cell. Herein, the functions of different parameters like thicknesses, doping and defect density, working temperature, series, and shunt resistances are investigated. The recommended solar cell parades the short‐circuit current density, open circuit voltage, fill factor, and efficiency of 39.11 mA cm−2, 1.10 V, 82.26%, and 35.44%, respectively. It is noteworthy that the efficiency is comparatively higher than the previously reported AISe‐based solar cell. The AgInSe2 semiconductor is easy to fabricate as well as has good electrical properties, therefore this proposed solar cell is highly efficient and cost effective.

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“…Nowadays, ternary or quaternary chalcogenide semiconducting materials are of scientific interest because the physical properties can be tuned to meet the specific requirements in the electronic device fabrication [1]. Ternary chalcogenide semiconductors like Cd-Zn-X (X = S, Se) become more interest because of possibility in tuning the electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

2020

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The present work is focussed on Zinc (2, 4, 6, 8 and 10 wt%) doped CdS thin films synthesized by sol-gel spin coating method and deposited on glass substrates. X-ray diffraction patterns of Zn doped CdS thin films exhibit cubic structure. The microstructural properties such as crystallite size, lattice constant, microstrain, dislocation density and stacking fault probability in the films were reported. The surface morphology and topography of the films was studied by using field emission scanning electron microscopy and atomic force microscopy. The incorporation of Zn in CdS and elemental composition of the films has been confirmed with X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). Raman spectrum of Zn doped CdS thin films exhibits 1LO and 2LO phonon modes. The optical band gap of CdS thin films increased from 2.63 to 2.73 eV with the increase of Zn dopant from 2 to 10%. Thermoelectric power measurements show negative Seebeck coefficient indicating n-type semiconducting behaviour. The carrier concentration of Zn doped CdS thin films at room temperature are found to be in the range of 10 19-10 20 cm −3 suggesting that the prepared films are degenerate semiconductors. The increase in thermal conductivity of Zn doped CdS thin film is due to the increase in carrier concentration of the films. The lattice thermal conductivity of Zn doped CdS thin films had an inverse temperature dependent and at high temperatures shows the dominance of phonon scattering.

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Influence of Cu doping on optical properties of (Cd–Zn)S nanocrystalline thin films: a review

Cited by 7 publications

References 144 publications

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

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Influence of Cu doping on optical properties of (Cd–Zn)S nanocrystalline thin films: a review

Cited by 7 publications

References 144 publications

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots

Design of an Efficient AgInSe2Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

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Product

Resources

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Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell