2019
DOI: 10.1103/physrevb.100.085120
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Influence of crystal structure on charge carrier effective masses in BiFeO3

Abstract: Ferroelectric-based photovoltaics have shown great promise as a source of renewable energy, thanks to their in-built charge separation capability, yet their efficiency is often limited by low charge carrier mobilities. In this work, we compare the photovoltaic prospects of various phases of the multiferroic material BiFeO 3 by evaluating their charge carrier effective masses from first-principles simulations. We identify a tetragonal phase with the promising combination of a large spontaneous polarisation and … Show more

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Cited by 14 publications
(16 citation statements)
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“…9,10 Moreover, it was reported very recently that T-BFO has a rather low effective electron mass that is comparable with those of high-mobility oxides such as Ga 2 O 3 and BaSnO 3 . 11 Based on these facts, T-BFO has been emerging as a promising candidate for oxide electronics and spintronics.…”
Section: Introductionmentioning
confidence: 99%
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“…9,10 Moreover, it was reported very recently that T-BFO has a rather low effective electron mass that is comparable with those of high-mobility oxides such as Ga 2 O 3 and BaSnO 3 . 11 Based on these facts, T-BFO has been emerging as a promising candidate for oxide electronics and spintronics.…”
Section: Introductionmentioning
confidence: 99%
“…Although anisotropic strain is powerful in tuning charge and spin phases, 21,22 it was seldom utilized to manipulate the structural phase transitions due to the limited anisotropies of the commonly used substrates. Herein, a strongly anisotropic template−nonpolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)-faceted ZnO (abbreviated as a-ZnO) was employed to exert highly anisotropic strains on BFO. The hexagonal ZnO unit cell corresponds to an orthogonal one through index transformation, 23 with ZnO (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) as one of the basal planes.…”
Section: Introductionmentioning
confidence: 99%
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“…Band gap energy and effective mass of various ferroelectric semiconductors. Red squares denote the data for Ba 4 Pn 2 O, blue squares for synthesized materials (β-CuGaO 2 , , BiFeO 3 , , KNbO 3 , , BaTiO 3 , , ZnSnO 3 , Sn 2 P 2 Se 6 , and Sn 2 P 2 S 6 ), and purple circles for theoretically suggested materials [ZnSnS 3 and ABiO 3 (A = Cd, Zn, Ca, and Mg) . The vertical dashed line indicates the Shockley–Queisser value of the band gap.…”
Section: Resultsmentioning
confidence: 99%