Influence of contact angle, growth angle and melt surface tension on detached solidification of InSb

Growth and anisotropy of transport properties of detached Cd0.78Zn0.22Te crystals

“…μ ⊥ is higher than μ . For instance, at room temperature, μ p⊥ = 1240 cm 2 /V s and μ p = 818 cm 2 /V s This high value of mobility can be due to reduction of dislocations in this crystal due to it grew without contact to the ampoule, as reported in [15][16][17][18][19] detached growth increases the mobility and quality of the grown crystal and reduced the dislocations density in it. Many authors reported high mobility for CdZnTe [33][34][35].…”

“…An explanation of the phenomenon has been given in the case of rough and smooth crucible [14]; this phenomenon is called "detachment" or "dewetting". The detached growth improves crystal quality [15][16][17][18] because the gap compensates for the differential contraction of the crystal and the crucible on cooling leading to decrease compressive stress. Two orders of magnitude of reduction in dislocation density have been reported [19].…”

Detached growth of germanium by directional solidification

“…Duffar et al [3] focused on the equilibria at the meniscus between the crystal-melt interface and the crucible wall: under terrestrial conditions, in microgravity for rough [1] and smooth [4] crucible surfaces, and on the stability of the meniscus [4,5]. Wilcox, Regel and their co-workers analysed conditions for the steady-state process based on a diffusion of gas across the meniscus [6][7][8][9][10][11]. There have been several experimental attempts to control the growth of detached crystals on Earth: GaSb [3,12], CdTe [13,14], Ge [15,16], GeSi [17].…”

Two-dimensional numerical simulation of thermocapillary convection in detached solidification

“…A new Bridgman crystal growth system is proposed to suppress convection and improve solidification interface shape by cooling of the top melt. For steady detached solidification occurring in a sealed ampoule in zero gravity [23,24], it is necessary for the growth angle to exceed a critical value, the contact angle for the melt on the ampoule wall to exceed a critical value, and the melt-gas surface tension to be below a critical value. These critical values would depend on the material properties and the growth parameters.…”