Appl. Phys. A
 2019
DOI: 10.1007/s00339-019-3214-4
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Influence of conduction-band non-parabolicity on terahertz intersubband Raman gain in GaAs/InGaAs step asymmetric quantum wells

A. Tiutiunnyk
1
,
I. Perez-Quintana
2
,
David Laroze
3
et al.
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Cited by 6 publications
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References 48 publications
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Influence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric Al Ga1−As/GaAs quantum well

Ungan
1
,
Bahar
2
,
Rodríguez-Magdaleno
3
et al. 2021
Materials Science in Semiconductor Processing
17
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11
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Influence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric Al Ga1−As/GaAs quantum well

Ungan
1
,
Bahar
2
,
Rodríguez-Magdaleno
3
et al. 2021
Materials Science in Semiconductor Processing
17
0
11
0
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Energy and stability of negatively charged trion in cylindrical quantum dot under temperature effect

Chnafi
1
,
Moussaouy
2
,
Mommadi
3
et al. 2020
Physica B: Condensed Matter
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Intra-band Raman scattering and gain in a double quantum well wire with asymmetrical barriers

Betancourt-Riera
1
,
Betancourt-Riera
2
,
Ferrer-Moreno
3
et al. 2021
Physica B: Condensed Matter
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