Influence of conducting filament dimension on the performance of ReRAM device in the SET state

Comprehensive Analysis of Read Fluctuations in ReRAM CiM by Using Fluctuation Pattern Classifier

“…Each ReRAM cell has a layered metal-insulator-metal structure, and stores information according to the resistance of the insulator part. According to the hopping percolation model, which is usually used to explain ReRAM conduction [27][28][29][30], electrons conduct in the form of moving from one hopping site to another in an insulator layer. Hopping sites are due to Oxygen vacancies (VO).…”

“…As the number of Endurance cycles increases, the size of the conductive filament (CF) expands [8,27]. In the case of HRS, the fluctuation rate decreases because the expansion of CF results in an increased number of hopping sites not involved in conduction (Fig.…”

Exploring the Physical Properties Related to Resistive Switching Events in HfO2-Based RRAM Devices with an Analytical Framework

“…The solution of eq is given in eq and produces a parabolic temperature profile T ( z ) with the maximum temperature ( T max ) in the middle of the filament (at z = 0), which is calculated from the finite element method (FEM) simulation. Here, the COMSOL simulator estimates the local temperature and temperature distribution across the device by solving heat and electrostatic equations. , Figure (a) and (b) depict the temperature and electric field profile. Figure (c) indicates the local temperature distribution across the TE–oxide layer–BE direction inside the MIM stack.…”

“…Here, the COMSOL simulator estimates the local temperature and temperature distribution across the device by solving heat and electrostatic equations. 20,51 is measured with V a = 0.6 V and r f = 5 nm. The obtained T max , above the critical temperature T Crit = 600 K for the HfO 2 RRAM device, is adequate to contribute to resistive switching.…”

“…Many analytical models for comprehending the resistive switching process of RRAM have been reported in the literature, for instance, growth/shrinkage of a conducting filament (CF), charging/discharging of a trap, and space charge limited conduction . Researchers have also emphasized electrothermal numerical models, including the temperature rise by virtue of Joule heat in conjunction with resistive switching, anionic rearrangement stimulation, density function theory simulation, − and molecular dynamic simulation . Moreover, analytical investigations − used the drift/diffusion of oxygen vacancies to mimic the resistance switching effect.…”