Influence of combined gas and vacuum breakdown mechanisms on memory effect in nitrogen

Živanović, Emilija

doi:10.1016/j.vacuum.2014.04.004

Cited by 10 publications

(6 citation statements)

References 29 publications

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“…This is a consequence of the large concentration of positive ions in gas for small relaxation time. The positive ions originate in the gas and from the previous discharge, and they create an afterglow [21] . The drift velocities of positive ions in the gases are very high, and consequently they reach the cathode very quickly.…”

Section: Memory Curvesmentioning

confidence: 99%

Applying the Different Statistical Tests in Analysis of Electrical Breakdown Mechanisms in Nitrogen Filled Gas Diode

Maluckov

Rančev

Radović

2016

Plasma Sci. Technol.

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This paper presents the results of our investigations of breakdown mechanisms, as well as a description of their influence on the distributions of time delay distributions, for a gas tube filled with nitrogen at 4 mbar. The values of the time delay are measured for different voltages, and the values of the relaxation times and their distributions and probability plots are analyzed. The obtained density distributions have Gaussian distributions and exponential distributions for different values of relaxation times (Gaussian for small values and exponential for large values of relaxation time). It is shown that for middle values of relaxation time the delay distributions have a shape between Gaussian and exponential distributions, which is a result of the different influences of electrical breakdown.

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Section: Memory Curvesmentioning

confidence: 99%

Applying the Different Statistical Tests in Analysis of Electrical Breakdown Mechanisms in Nitrogen Filled Gas Diode

Maluckov

Rančev

Radović

2016

Plasma Sci. Technol.

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“…This is something which indicates instability in the operation of the component with respect to the delay time. In the earlier results [22][23][24][25] of the memory effect study, it can be seen that in the region of increase for most experimental conditions ts is less than tf, as well as that the standard deviation of tf is very small, in the analysis of total delay time, in the first approximation we can assume that under constant experimental conditions, it is deterministic. In this case, the delay time becomes the sum of one deterministic tf and one stochastic quantity ts, so it takes on its stochastic character from the statistical delay time.…”

Section: Analysis Of Delay Timementioning

confidence: 94%

“…The first one is a tendency toward delay time decrease with increasing overvoltage for all GFSAs. It has been previously tested and confirmed for gas-filled tube that by increasing the voltage, the probability of a breakdown in the gas increases as well as the probability that the secondary electrons released from the cathode lead to a breakdown [22][23][24]. When the yield of electrons in a gap is a constant, the mean value of delay time is inversely proportional to the breakdown probability [22].…”

Section: Analysis Of Delay Timementioning

confidence: 98%

The evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters

Živanović

Zivkovic

Pejović

2021

Facta Univ Electron Energ

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The results of the reliability testing of Littelfuse and EPCOS gas-filled surge arresters for different overvoltages under DC discharge will be presented in this paper. The static breakdown voltage of these gas components was estimated using voltage increase rates ranging from 1 to 10 V/s. A detailed statistical analysis of experimental data has also been done. The delay time of these components for different nominal overvoltages has been investigated as an additional aspect important for component reliability. In addition, the delay time method was used as a statistical method which can give neither ion nor neutral active states number density in the glow and afterglow. It can be employed for qualitative observation of ions and neutral active states decay in the afterglow to such low concentrations where the other methods cannot be applied. Finally, a comparison has been done between the characteristics of two gas-filled surge arresters which have the same nominal overvoltage (Littelfuse and EPCOS) from different manufacturers.

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“…As a criterion of whether it is a technical vacuum or not, the dependence U s = f (pd) was monitored for the gas sample used in this experiment, which was published in [17]. The product value of inter-electrode distance 0.01 cm and nitrogen pressure in the tube of 6.6 mbar lies to the left of the Paschen's curve minimum.…”

Section: Nitrogen Memory Effectmentioning

confidence: 99%

Investigation of the effect of additional electrons originating from the ultraviolet radiation on the nitrogen memory effect

Živanović

2015

FACTA U EE

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The influence of ultraviolet radiation on memory effect in nitrogen has been investigated. The spectrum of the radiation which passes through the walls of the experimental sample was obtained by the spectrometer. A detailed comparison of experimental results of electrical breakdown time delay as a function of afterglow period with and without ultraviolet irradiation was performed. These studies were done for such product of gas pressure and inter-electrode distance when both breakdown initiation mechanisms exist. The research has shown that ultraviolet radiation leads to the decrease in ion concentration in early nitrogen afterglow due to recombination of nitrogen ions with electrons released from the tube walls and electrodes. Meanwhile, it has been cofirmed that this radiation has a negligible influence on the breakdown initiation in late nitrogen afterglow when a significant nitogen atom concentration is persistent. When the concentration of nitrogen atoms decreases enough, the breakdown initiation is caused by cosmic rays but UV photons have an important influence because of the rise of the electron yield. [Projekat Ministarstva nauke Republike Srbije, br. 177007]

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Influence of combined gas and vacuum breakdown mechanisms on memory effect in nitrogen

Cited by 10 publications

References 29 publications

Applying the Different Statistical Tests in Analysis of Electrical Breakdown Mechanisms in Nitrogen Filled Gas Diode

Applying the Different Statistical Tests in Analysis of Electrical Breakdown Mechanisms in Nitrogen Filled Gas Diode

The evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters

Investigation of the effect of additional electrons originating from the ultraviolet radiation on the nitrogen memory effect

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