Influence of Chemical Cleaning Procedures and Thermal Oxidation Processes on the Uniformity of MOS Gate Oxides on Abrupt Steps on Silicon Surfaces
R. Souza,
W.A. Nogueira,
S.G. Dos Santos Filho
Abstract:This work analyzes the influence of some chemical steps used in standard cleaning recipes on the surface micro-roughness of silicon wafers. The effect of varying the ammonium hydroxide concentration in the NH4OH: H2O2:H2O solution was studied and silicon wafer micro-roughness was characterized by atomic force microscopy technique at different scans of 1µmx1µm. Based on the results, it was possible to point the condition to obtain low surface micro-roughness for NH4OH-based solutions with the lowest NH4OH conte… Show more
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