2012
DOI: 10.1109/tnano.2011.2181998
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Influence of Channel and Underlap Engineering on the High-Frequency and Switching Performance of CNTFETs

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Cited by 32 publications
(23 citation statements)
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“…Where C GG is the overall gate capacitance including gate oxide capacitance, quantum capacitance and capacitance that correspond to field terminating on source and drain regions [23,24]. It is calculated as:…”
Section: Overlapping Gate-on-drainmentioning
confidence: 99%
“…Where C GG is the overall gate capacitance including gate oxide capacitance, quantum capacitance and capacitance that correspond to field terminating on source and drain regions [23,24]. It is calculated as:…”
Section: Overlapping Gate-on-drainmentioning
confidence: 99%
“…where g m = (∂I DS /∂V GS )| V DS is the transconductance and C GG = (∂Q G /∂V GS ) V DS is the overall gate capacitance including gate oxide capacitance, quantum capacitance and capacitance that correspond to field terminating on the source and the drain regions and Q G is the total gate charge [15]. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…where C GG is the overall gate capacitance including gate oxide capacitance, quantum capacitance and capacitance that corresponds to field terminating on source and drain regions [14]. Fig.…”
Section: Cutoff Frequencymentioning
confidence: 99%