The performance and electrical characteristics of hybrid carbon nanotube field effect transistor (CNTFET) are studied. Hybrid CNTFET consists of heavily doped carbon nanotube (CNT) as a one contact connected to intrinsic CNT as a channel. The opposite side of the channel is connected to a metal as the other contact. If the source is the metal and the drain is the heavily doped, this type is called metal-semiconductor hybrid CNT or MSH-CNTFET. While when the source is the heavily doped and the drain is the metal, this is called semiconductor-metal hybrid CNT or SMH-CNTFET. The electrical characteristics of the device has been studied using a two-dimensional (2D) quantum mechanical simulator by solving 2D Poisson's equation self consistently with Non-equilibrium Green function (NEGF). The proposed devices are found to overcome the ambipolar conduction of Schottky barrier CNTFETs and improve frequency performance of metal-oxide-semiconductor CNTFETs.