Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells

Salavei, Andrei; Rimmaudo, I.; Piccinelli, Fabio; Romeo, Alessandro

doi:10.1016/j.tsf.2012.11.121

Cited by 55 publications

(12 citation statements)

References 7 publications

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“…Krishnakumar et al also have reported deposition of CdTe layer to reduce the CdTe thin film thickness below 1 lm using close spaced sublimation technique and substrate temperature changed [16]. Salavei et al also studied the physical and electrical properties of CdTe films deposited with different thicknesses by vacuum evaporation, and also investigated the effect of CdTe thickness on efficiency of CdTe solar cells [17].…”

Section: Introductionmentioning

confidence: 99%

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

2016

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Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

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Section: Introductionmentioning

confidence: 99%

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

2016

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“…It has zinc blende cubic structure with lattice constant 6.481 Å. Its 2 μm thickness layer is enough to absorb entire incident sunlight and covert into electricity [6][7][8][9]. It has enormous potential applications in the field of optoelectronic devices like solar cells, optical and nuclear detectors, light-emitting diodes (LEDs), field effect transistors, nonlinear integrated optical devices, lasers etc.…”

Section: Introductionmentioning

confidence: 99%

Optimization of physical properties of vacuum evaporated CdTe thin films with the application of thermal treatment for solar cells

Chander

Dhaka

2015

Materials Science in Semiconductor Processing

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“…The XRD analysis of Romeo et al on the ultrathin films with d = 0.7 lm and 1 lm show a similar phase and XRD intensity from an interlayer of Cd 5 S 4 Te with d = 0.8 lm. 2 Because XRD can penetrate the layer down to 1 lm from the surface, they concluded that this interlayer is not far from the back contact and it has been extended to the BC region during the annealing process. Intermixing with sulfur (even with reoptimized treatment condition) reduced the lattice parameter, bandgap (DE g = À0.2 eV), and efficiency (7.4%).…”

Section: Introductionmentioning

confidence: 99%

SCAPS Modeling for Degradation of Ultrathin CdTe Films: Materials Interdiffusion

Houshmand

Zandi

Gorji

2015

JOM

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Ultrathin film solar cells based on CdS/CdTe (d CdTe £ 1 lm) suffer from two main issues: incomplete photo absorption and high degradation rate. The former is cured by light-trapping techniques, whereas the latter is a matter of fabrication details. Interdiffusion of the material components and formation of subsequent interlayers at the front/back region can change the optical/electrical properties and performance/stability of the device. We model the degradation of the ultrathin CdTe film devices considering the material interdiffusion and interlayers formation: CdTeS, CdZnTe, Cu x Te (i.e., Te/Cu bilayer), and oxide interlayers (i.e., CdTeO 3 ). The diffusion rate of the materials is considered separately and the reactions that change the interlayer's properties are studied. Additionally, a back contact of single-walled carbon nanotube showed a higher stability than the metallic contacts. A new time-dependent approach is applied to simulate the degradation rate due to formation of any interlayer. It is shown that the materials interdiffusion causes a defect increment under thermal stress and illumination. The metallic back contact accelerates the degradation, whereas single-walled carbon nanotubes show the highest stability. A SCAPS simulator was used because of its ability in defining the properties of the back contact and metastabilities at the interface layers. The properties of the layers were taken from the experimental data reported in the literature.

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Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells

Cited by 55 publications

References 7 publications

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

Optimization of physical properties of vacuum evaporated CdTe thin films with the application of thermal treatment for solar cells

SCAPS Modeling for Degradation of Ultrathin CdTe Films: Materials Interdiffusion

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