Influence of CdS Buffer Layer Thickness on the Photovoltaic Parameters of Solar Cells

Komilov, A.

doi:10.3103/s0003701x18050092

Cited by 13 publications

(5 citation statements)

References 4 publications

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“…CdS is one of the promising buffer layers in photovoltaic cells [ 17 , 18 , 19 ]. CdS films must have good transparency and be neither thin nor thick to prevent short circuits or light absorption in the buffer layer [ 20 ].…”

Section: Introductionmentioning

confidence: 99%

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

et al. 2023

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As a promising solar absorber material, antimony selenide (Sb2Se3) has gained popularity. However, a lack of knowledge regarding material and device physics has slowed the rapid growth of Sb2Se3-based devices. This study compares the experimental and computational analysis of the photovoltaic performance of Sb2Se3-/CdS-based solar cells. We construct a specific device that may be produced in any lab using the thermal evaporation technique. Experimentally, efficiency is improved from 0.96% to 1.36% by varying the absorber’s thickness. Experimental information on Sb2Se3, such as the band gap and thickness, is used in the simulation to check the performance of the device after the optimization of various other parameters, including the series and shunt resistance, and a theoretical maximum efficiency of 4.42% is achieved. Further, the device’s efficiency is improved to 11.27% by optimizing the various parameters of the active layer. It thus is demonstrated that the band gap and thickness of active layers strongly affect the overall performance of a photovoltaic device.

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Section: Introductionmentioning

confidence: 99%

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

et al. 2023

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“…The formation of defects on the surface of crystals when exposed to atomic particles has always been of interest to researchers due to the widespread use of these materials in surface engineering, 1–3 optoelectronics, 4–9 photovoltaics 10–13 space materials science, 14,15 and other fields of science and technology 8,16–20 . Today, high‐tech materials, in contrast to bulk materials, have special surface properties with special performance characteristics 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Sharopov

Kaur

Kurbanov

et al. 2022

Surface & Interface Analysis

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We explore the experimental and simulation results of the formation of defects on the surface of lithium fluoride thin films under irradiation with different mass ions using total current (TC) spectroscopy, secondary ion mass spectroscopy (SIMS), and the Stopping and Range of Ions in Matter (SRIM) software package. A comparative study was carried out with ions of different masses, and inconsistencies in the occurring physical phenomena between our early concepts were found. It is shown that in the case of heavy ions irradiation, they are implanted and appear as substitutional atoms into the bulk of the crystal. For ions with the smallest ion mass, the distribution of interstitial defects is greater on the surface than in the bulk of the crystal. An attempt is made to explain the formation of some defects on the surface (formed peaks in the TC spectra) by the method of computer simulation.

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“…Образование дефектов на поверхности кристаллов при воздействии на них атомными частицами всегда интересовало исследователей из-за широкого использования этих материалов в поверхностной инженерии [1][2][3], оптоэлектронике [4][5][6], фотовольтаике [7][8], космическом материа-ловедении [9][10] и других областях науки и техники [11][12][13]. На сегодняшний день высокотехнологичные материалы, в отличие от объемных, имеют особые поверхностные свойства со специальными рабочими характеристиками [14].…”

Section: Introductionunclassified

Исследование образования дефектов на поверхности кристаллов LiF при бомбардировке ионами цезия

Шаропов¹

2022

УФЖ

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В настоящей работе рассмотрены экспериментальные результаты по исследованию образования дефектов на поверхности кристаллов LiF при облучении ионами с использованием методик спектроскопии полного тока (ПТ), вторично-ионной масс-спектрометрии (ВИМС) и программного комплекса SRIM. Проведенные исследования на кристалле LiF при ионном облучении показали, что работает ударный механизм образования дефектов, при этом наблюдается последовательное образование кластерных центров до их коалесценции в коллоидные центры. При ионном облучении наблюдается фазовый переход поверхности кристалла LiF с образованием коллоидных центров с последующей металлизацией поверхности, а также скоплением кластеров нейтральных атомов фтора (пузырьков). Показано, что при облучении ионами образуется большая концентрация вакансий и междоузельных дефектов на поверхности и в объеме кристалла.

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Influence of CdS Buffer Layer Thickness on the Photovoltaic Parameters of Solar Cells

Cited by 13 publications

References 4 publications

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Исследование образования дефектов на поверхности кристаллов LiF при бомбардировке ионами цезия

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