1999
DOI: 10.1006/spmi.1999.0763
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Influence of carrier–carrier scattering on intraband dephasing

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Cited by 6 publications
(6 citation statements)
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“…Specifically, interface roughness scattering 27 has been identified as a dominant mechanism for dephasing in GaAs/ AlGaAs superlattices over a wide temperature range; competitive dephasing mechanisms have been reported due to LO-phonon emission in a miniband wider than the LO-phonon energy ͑36 meV for GaAs-based superlattices͒, and also from carrier-carrier scattering effects. 25,26 In all cases, the estimated linewidth for broadening from such effects ranges as ϳ͑1.25-2.5͒ meV, which corresponds to dephasing times in a range of ϳ͑1.0-0.5͒ ps; [25][26][27] this broadening in energy is nontrivial as it corresponds to about 20% of the Bloch frequency.…”
Section: Summary and Discussionmentioning
confidence: 90%
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“…Specifically, interface roughness scattering 27 has been identified as a dominant mechanism for dephasing in GaAs/ AlGaAs superlattices over a wide temperature range; competitive dephasing mechanisms have been reported due to LO-phonon emission in a miniband wider than the LO-phonon energy ͑36 meV for GaAs-based superlattices͒, and also from carrier-carrier scattering effects. 25,26 In all cases, the estimated linewidth for broadening from such effects ranges as ϳ͑1.25-2.5͒ meV, which corresponds to dephasing times in a range of ϳ͑1.0-0.5͒ ps; [25][26][27] this broadening in energy is nontrivial as it corresponds to about 20% of the Bloch frequency.…”
Section: Summary and Discussionmentioning
confidence: 90%
“…IV. But in recent years, many studies on coherent Bloch oscillations have pointed to the importance of additional scattering effects such as carrier-carrier scattering, 25 LO-phonon scattering, 26 and alloy disorder ͑interface roughness͒ scattering 27 due to superlattice compositional doping, all effects that strongly influence the dephasing of coherent Bloch oscillations, and therefore have a significant influence on the magnitude of the spontaneous emission output. The dephasing effects result in a broadening of the peaks of the spontaneous emission probability function that determines the selection rule for transitions, in our case q = m B , and also dampen the output THz radiation amplitude.…”
Section: Summary and Discussionmentioning
confidence: 99%
“…It turns out, however, that the width of the miniband compared with typical phonon energies has a profound influence on the relaxation properties as well as the excitation conditions. At high excitation densities, BOs are strongly affected by Coulomb scattering [329,330]. Interestingly, the scattering of coherently generated carriers is found to differ significantly from the scattering with an incoherent background of carriers [329].…”
Section: Bloch Oscillationsmentioning
confidence: 94%
“…At high excitation densities, BOs are strongly affected by Coulomb scattering [329,330]. Interestingly, the scattering of coherently generated carriers is found to differ significantly from the scattering with an incoherent background of carriers [329]. In fact, terahertz emission measurements from optically excited BOs indicate that the intraband dephasing resulting from scattering with incoherent carrier densities is twice as efficient as in the case of coherent densities [329].…”
Section: Bloch Oscillationsmentioning
confidence: 96%
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