Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

Kuznia, J. N.; Khan, M. Asif; Olson, D. T.; Kaplan, R.; Freitas, J. A.

doi:10.1063/1.354069

Cited by 184 publications

(57 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Here, the inclusion of an AlN buffer layer with the adequate thickness leads to a superior crystal quality and a better optical performance of the GaN epilayer. 11 Recently, it has been reported that both the grain size and nuclei density of the AlN buffer layer play a key role in the quality of the GaN epilayer. 12 Besides, aluminum nitride is known to be one of the most promising piezoelectric materials for highfrequency surface acoustic wave ͑SAW͒ devices 13 because of its high sound velocity.…”

Section: Introductionmentioning

confidence: 99%

Growth dynamics of reactive-sputtering-deposited AlN films

Auger

Vázquez

Sánchez

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

͑ ͒We have studied the surface kinetic roughening of AlN films grown on Si͑100͒ substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a ͑002͒ preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent ␤ = 0.37± 0.03. In this regime a superrough scaling behavior is found with the following exponents: ͑i͒ Global exponents: roughness exponent ␣ = 1.2± 0.2 and ␤ = 0.37± 0.03 and coarsening exponent 1/z = 0.32± 0.05; ͑ii͒ local exponents: ␣ loc =1, ␤ loc = 0.32± 0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth dynamics of reactive-sputtering-deposited AlN films

Auger

Vázquez

Sánchez

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Low energy electron diffraction (LEED) studies, on amorphous GaN buffer layers grown by MOCVD, have reported that post-growth re-crystallization occurs during annealing. [15] …”

Section: Buffer Layermentioning

confidence: 99%

Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

Kim

Berichev

Bensaoula

et al. 1998

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

Gallium Nitride (GaN) thin films were successfully grown by electron cyclotron resonance molecular beam epitaxy (ECR-MBE), gas source MBE (GSMBE), and chemical beam epitaxy (CBE). Time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and reflection high energy electron diffraction (RHEED) were used in-situ to determine the surface composition, crystalline structure, and growth mode of GaN thin films deposited by the three MBE methods. The substrate nitridation and the buffer layers were monitored and optimized by TOF-MSRI and RHEED. For GSMBE, the gallium to nitrogen ratio is found to correlate well with ex-situ optical properties. In the case of CBE, carbon incorporation determines the surface morphology, crystalline quality and optical activity of the epilayers.

show abstract

“…Presently sapphire is most commonly used for the growth of GaN epilayers for its relatively low price and stability at high temperatures. For the growth of high-quality GaN films a low-temperature GaN or AlN buffer layer, with a thickness around 20 nm, is often deposited prior to the growth of the epitaxial layer at high temperature [4,5]. This technique has proved to be highly successful in the metalorganic chemical vapor deposition process and commercial quality LEDs have been grown utilizing this technique.…”

mentioning

confidence: 99%

Study of Low-Frequency Excess Noise Transport in Ga-Face and N-Face GaN Thin Films Grown on Intermediate-Temperature Buffer Layer by RF-MBE

Fong

Leung

Xie

et al. 2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

We report detailed investigations of low‐frequency excess noise in both Ga‐faced and N‐faced GaN thin films grown by RF‐plasma molecular beam epitaxy. The GaN epilayers were grown on double buffer layers, and consisted of a thick intermediate‐temperature buffer layer (ITBL) deposited at 690 °C and a conventional thin buffer layer. Deposition of the thin buffer layer is used to control the polarity of the GaN epilayer. Low‐frequency excess noise was studied in detail to examine the effects on the ITBL on the noise. The low‐frequency noise is attributed to the correlated fluctuations in number and mobility of carriers, arising from the capture and emission by localized states. Our experimental results show that the polarity of the GaN epilayer and the utilization of ITBL have strong influence on the defect density of the GaN material.

show abstract

Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

Cited by 184 publications

References 10 publications

Growth dynamics of reactive-sputtering-deposited AlN films

Growth dynamics of reactive-sputtering-deposited AlN films

Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

Study of Low-Frequency Excess Noise Transport in Ga-Face and N-Face GaN Thin Films Grown on Intermediate-Temperature Buffer Layer by RF-MBE

Contact Info

Product

Resources

About