Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition

Звонков, Б. Н.; Karpovich, I. A.; Baidus, N. V.; Филатов, Д. О.; Morozov, S. V.

doi:10.1134/1.1340297

Cited by 20 publications

(16 citation statements)

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“…The thickness of the GaAs cap layer (d GaAs ) varied from 3 to 30 nm. The InAs layer was doped with bismuth in order to increase the QDs' uniformity [12]. On the surface of some investigated structures a $ 1 mm 2 circle area semi-transparent rectifying Au Schottky contact was deposited by thermal evaporation in vacuum at 100°C.…”

Section: Experimental Techniquesmentioning

confidence: 99%

Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

Горшков

Волкова

Истомин

et al. 2016

Solid State Communications

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Section: Experimental Techniquesmentioning

confidence: 99%

Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

Горшков

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Истомин

et al. 2016

Solid State Communications

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“…In this work, it is proposed to use GaAsBi. Bismuth is an isovalent doping and forms ternary, quaternary and quinary solid solutions with III–V compounds [18,32–38]. Bi incorporation into GaAs makes it possible to change the lattice mismatches.…”

Section: Introductionmentioning

confidence: 99%

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

Pashchenko

Lunin

Danilina

et al. 2018

Beilstein J. Nanotechnol.

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This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/GaAs heterostructures. An increase in the thickness of the GaAs barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the GaAs barrier layers on the structural and optical properties of the InAs/GaAs heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in GaAs decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm−2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

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“…A buffer n GaAs layer with a thickness of ≈0.6 µm and an elec tron concentration of ∼10 16 cm -3 was grown at a tem perature of 650°C. Then, at a temperature of 520°C, an InAs QD layer with a nominal thickness of about five monolayers was grown via laser doping of the layer with a bismuth surfactant [4], which made it possible to obtain more homogeneous QDs. We studied struc tures with a QD layer covered by a GaAs coating layer with a thickness of 20 nm.…”

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confidence: 99%

“…Earlier, in [1-3], emission mech anisms in QDHs grown by molecular beam epitaxy were studied. In this work, we study the emission of charge carriers from QDHs grown by vapor phase epi taxy from metalorganic compounds (MOVPE) and how it is affected by electric field, temperature, and defect formation upon anodic oxidation of the QDH surface.The studied QDHs with InAs/GaAs QDs were grown on the (100) surface of a semi insulating and conducting GaAs substrates by MOVPE at the atmo spheric pressure of hydrogen, which acted as a gas car rier of the metalorganic compounds [4]. A buffer n GaAs layer with a thickness of ≈0.6 µm and an elec tron concentration of ∼10 16 cm -3 was grown at a tem perature of 650°C.…”

mentioning

confidence: 99%

“…The studied QDHs with InAs/GaAs QDs were grown on the (100) surface of a semi insulating and conducting GaAs substrates by MOVPE at the atmo spheric pressure of hydrogen, which acted as a gas car rier of the metalorganic compounds [4]. A buffer n GaAs layer with a thickness of ≈0.6 µm and an elec tron concentration of ∼10 16 cm -3 was grown at a tem perature of 650°C.…”

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confidence: 99%

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Effect of electric field, temperature, and defect formation on processes of nonequilibrium carrier emission from InAs/GaAs quantum dots

Горшков

Karpovich

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2012

J. Synch. Investig.

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The emission of charge carriers from quantum dots (QDs) into a semiconductor matrix is of considerable interest in fundamental and applied aspects [1][2][3]. A photoelectric signal in the region of the interband optical absorption of QDs appears as a result of the emission of photoexcited electrons and holes from dimensional quantization levels into the matrix of a semiconductor. Emission can occur via three mecha nisms [3]: the overbarrier thermal, the tunnel, and the thermally activated tunnel mechanism via an interme diate excitation level. The role of each of these mech anisms depends on the way and the conditions at which the structures with QDs are grown, on the shape of the potential barrier in the QDs which can be varied by applying external stress to the structure, and on the measurement temperature. Since recombination tran sitions compete with emission transitions, the effec tiveness of emission can also be affected by the forma tion of defects in the structure. Devices on quantum dimensional heteronanostructures (QDHs) are designed using various technological operations (anodic oxidation, etching, metal deposition, ion implantation etc.) which can be accompanied by the formation of defects in the structure as a result of chemical reactions on the surface and in the bulk of the semiconductor. Earlier, in [1-3], emission mech anisms in QDHs grown by molecular beam epitaxy were studied. In this work, we study the emission of charge carriers from QDHs grown by vapor phase epi taxy from metalorganic compounds (MOVPE) and how it is affected by electric field, temperature, and defect formation upon anodic oxidation of the QDH surface.The studied QDHs with InAs/GaAs QDs were grown on the (100) surface of a semi insulating and conducting GaAs substrates by MOVPE at the atmo spheric pressure of hydrogen, which acted as a gas car rier of the metalorganic compounds [4]. A buffer n GaAs layer with a thickness of ≈0.6 µm and an elec tron concentration of ∼10 16 cm -3 was grown at a tem perature of 650°C. Then, at a temperature of 520°C, an InAs QD layer with a nominal thickness of about five monolayers was grown via laser doping of the layer with a bismuth surfactant [4], which made it possible to obtain more homogeneous QDs. We studied struc tures with a QD layer covered by a GaAs coating layer with a thickness of 20 nm.Anodic oxidation of the GaAs surface was carried out in the galvanostatic mode at a current density of 1 mA/cm 2 in a solution of ammonium pentaborate in a mixture of ethylene glycol and water. The thickness of the oxide layer d ox was determined by the growth constant (2 nm/V) and was 20 nm. Formation of the oxide layer with the thickness d ox consumes a GaAs layer with a thickness of 0.67 d ox [5].The energy spectrum of the QDH was studied by photocurrent and photo emf spectroscopy in the Schottky barrier (the PSB spectroscopy). To create a Schottky barrier, a semitransparent rectifying gold con tact with an area of ~1 mm 2 was deposited onto the sur face of nonoxidized and oxidized structures by...

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Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition

Cited by 20 publications

References 1 publication

Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

Effect of electric field, temperature, and defect formation on processes of nonequilibrium carrier emission from InAs/GaAs quantum dots

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