Influence of Bi2O3 and CuO addition on low-temperature sintering and dielectric properties of Ba0.6Sr0.4TiO3 ceramics

High dielectric constant of (Ba0.96Ca0.04)(Ti0.85Zr0.15)O3 multilayer ceramic capacitors with Cu doped Ni electrodes

“…The Cu signal is represented by the red points, thus it was found that the Cu 2+ diffuses into the BCTZ dielectric layer significantly. It is well known that CuO is incorporated into the BT structure at CuO ∼0.6 mol% because of its small ionic radius it can substitute for Ti 4+ , which is in agreement with the literature [18,19]. The grain size differs between the 0.92 mol% and 2.76 mol% Cu doped Ni MLCC inner electrodes.…”

Electrical and magnetic properties of low-temperature sintered xBa0.6Sr0.4TiO3+(1−x)Ni0.2Cu0.2Zn0.62O(Fe2O3)0.98 composite ceramics

“…It is the electrons' transfer from Fe 2+ ion to Fe 3+ ion that reduces DC resistivity [27]. For the specimens sintered at 900 • C, the resistivity decreases from 9 × 10 10 cm to 9 × 10 8 cm as BST content x increases from 0 to 60 wt.% ( NiCuZn ∼2.5 × 10 11 cm, BST ∼2 × 10 10 cm) [28,29]. However, for the specimens sintered at 925 • C, 950 • C and 975 • C, the resistivities increase with an increase of BST content x (≤20 wt.%).…”

Dielectric and ferroelectric responses of Ba0.99−xBi2x/3Ca0.01Zr0.02Ti0.98O3 ceramics

“…A crossover to a relaxor state is also usually observed in BaZr 1 À y Ti y O 3 ceramics by heterovalent substitution for Ba, such as Ba 1 À x Ln x Zr 0.1 Ti 0.9 O 3 [5,6], Ba 1 À x Ln x Zr 0.2 Ti 0.8 À x/4 O 3 [7] and Ba 1 À x A 2x/3 Zr 1 À y Ti y O 3 (A = La, Nd, Bi) [8][9][10]. Bi 2 O 3 not only can incorporate ABO 3 crystal lattice to improve the electric properties but also is commonly used as a sintering aid to accomplish a substantial sintering temperature reduction [11,12]. To date, most studies have focused on the effect of Bi 3+ concentration on the degree of diffuseness and the relaxation of ferroelectric-paraelectric phase transition [13][14][15].…”