Abstract:In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base-emitter (B-E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self-heating during the different am… Show more
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