Influence of Bandstructure and Channel Structure on the Inversion Layer Capacitance of Silicon and GaAs MOSFETs

Pal, Himadri S.; Cantley, Kurtis D.; Ahmed, Shaikh; Lundstrom, Mark

doi:10.1109/ted.2007.914830

Cited by 43 publications

(17 citation statements)

References 19 publications

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“…The ON-current variation with width- [1][2][3][4][5][6][7][8][9][10] This is an observation also noted in [7] and [30], when comparing channels of materials with different quantum capacitance (C Q ). In these works, it was shown that in channels with bias dependent quantum wells, differences in C Q are smeared out and create much less differences in the total gate capacitance and the inversion layer charge of the device.…”

Section: Implications On the On-current Variations With Size Variationsmentioning

confidence: 95%

Design Space for Low Sensitivity to Size Variations in [110] PMOS Nanowire Devices: The Implications of Anisotropy in the Quantization Mass

Neophytou

Klimeck

2009

Nano Lett.

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A 20-band sp(3)d(5)s* spin-orbit-coupled, semiempirical, atomistic tight-binding model is used with a semiclassical, ballistic, field effect transistor (FET) model, to examine the ON-current variations to size variations of [110]-oriented PMOS nanowire devices. Infinitely long, uniform, rectangular nanowires of side dimensions from 3 to 12 nm are examined and significantly different behavior in width versus height variations are identified and explained. Design regions are identified, which show minor ON-current variations to significant width variations that might occur due to lack of line width control. Regions which show large ON-current variations to small height variations are also identified. The considerations of the full band model here show that ON-current doubling can be observed in the ON-state at the onset of volume inversion to surface inversion transport caused by structural side size variations. Strain engineering can smooth out or tune such sensitivities to size variations. The cause of variations described is the structural quantization behavior of the nanowires, which provide an additional variation mechanism to any other ON-current variations such as surface roughness, phonon scattering, etc.

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Section: Implications On the On-current Variations With Size Variationsmentioning

confidence: 95%

Design Space for Low Sensitivity to Size Variations in [110] PMOS Nanowire Devices: The Implications of Anisotropy in the Quantization Mass

Neophytou

Klimeck

2009

Nano Lett.

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“…However, in nanoscale devices, as the oxide thickness approaches the nanometer regime, the oxide capacitance C ox becomes comparable to the inversion layer capacitance C inv which means that the quantum capacitance C Q and the centroid capacitance C cent start to affect the gate capacitance [8]. The centroid capacitance C cent is related to the average physical distance of the electrons present in the quantum well/2DEG from the metal gate [2]. In the case of AlInN/GaN MOSHEMT, the carriers are confined better in the 2DEG and all charge carriers are assumed to be located at the same position inside the quantum well and hence the centroid capacitance C cent can be neglected.…”

Section: Quantum Capacitance In Heterostructuresmentioning

confidence: 99%

“…GaN-based high electron mobility transitors (HEMTs) are the most preferred devices for high-power and high-frequency applications due to their suitable material properties such as high breakdown voltage, high saturation velocity, low effective mass, high thermal conductivity and high two-dimensional electron gas (2DEG) density of the order of 10 13 cm −2 at the heterointerface [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The MOS capacitor formed in MOSHEMT has equivalent gate capacitance which is the series combination of oxide capacitance (C ox ) and inversion-layer capacitance (C inv ) [2]. The inversion-layer capacitance is inherent to all MOSHEMT structures and this capacitance has a significant influence on the performance of scaled-down devices with thin gate oxide [3].…”

Section: Introductionmentioning

confidence: 99%

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Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

2015

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In this paper, we have developed a mathematical model to predict the behaviour of gate capacitance and threshold voltage with nanoscale variation of oxide thickness in AlInN/GaN and AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). The results obtained from the model are compared with the TCAD simulation results to validate the model. It is observed that AlInN/GaN MOSHEMT has an advantage of significant decrease in gate capacitance up to 0.0079 pF/μm 2 with increase in oxide thickness up to 5 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance in AlInN/GaN MOSHEMT reduces the propagation delay and hence improves the RF performance of the device.

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“…As a consequence, the ideal capacitance-voltage (CV) characteristic of III-V metaloxide-semiconductor (MOS) structures can deviate considerably from the well established CV characteristic of silicon MOS structures. [3][4][5][6][7] Knowledge of the ideal III-V MOS CV characteristic is essential, as it is required when assessing the impact of interface defects on the experimental CV responses of real III-V MOS systems. 8,9 In this letter, we extend on the work reported in Ref.…”

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confidence: 99%

Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

O’Regan

Hurley

2011

Applied Physics Letters

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The capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor capacitors (MOSCAPs) is calculated in three cases. First, quantization is not considered, then quantization of the C-valley is included, and finally quantization of the Gamma-, X-, and L-valleys is included. The choice of valley energy-minima is shown to determine the onset of occupation of the satellite valleys and corresponding increase in total capacitance. An equivalent-oxide-thickness correction is defined and used as a figure-of-merit to compare III-V to Si MOSCAPs and as a metric for the density-of-states bottleneck. (C) 2011 American Institute of Physics. (doi:10.1063/1.3652699

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Influence of Bandstructure and Channel Structure on the Inversion Layer Capacitance of Silicon and GaAs MOSFETs

Cited by 43 publications

References 19 publications

Design Space for Low Sensitivity to Size Variations in [110] PMOS Nanowire Devices: The Implications of Anisotropy in the Quantization Mass

Design Space for Low Sensitivity to Size Variations in [110] PMOS Nanowire Devices: The Implications of Anisotropy in the Quantization Mass

Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

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