Influence of Au capping layer on the magnetic properties of Fe/GaAs(001) ultrathin films

Tacchi, S.; Stollo, A.; Gubbiotti, G.; Carlotti, G.; Košuth, M.; Ebert, H.

doi:10.1016/j.susc.2007.04.235

Cited by 7 publications

(3 citation statements)

References 21 publications

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“…While interface imperfections and protective capping layers 42,43 might lead to quantitatively different experi-mental results, the qualitative results presented here are expected to be observable in high-quality samples using state-of-the-art optical setups.…”

Section: Discussionmentioning

confidence: 80%

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Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

2014

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We investigate the anisotropy of the optical properties of thin Fe films on GaAs(001) from first-principles calculations. Both intrinsic and magnetization-induced anisotropy are covered by studying the system in the presence of spin-orbit coupling and external magnetic fields. We use the linearized augmented plane wave method, as implemented in the WIEN2K density functional theory code, to show that the C 2v symmetric anisotropy of the spin-orbit coupling fields at the Fe/GaAs(001) interface manifests itself in the corresponding anisotropy of the optical conductivity and the polar magneto-optical Kerr effect. While their magnetization-induced anisotropy is negligible, the intrinsic anisotropy of the optical properties is significant and reflects the underlying C 2v symmetry of the Fe/GaAs(001) interface. This suggests that the effects of anisotropic spin-orbit coupling fields in experimentally relevant Fe/GaAs(001) slabs can be studied by purely optical means.

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Section: Discussionmentioning

confidence: 80%

“…Experimental results for real samples are usually influenced by dirt and protective capping layers, which have been shown to reduce the size of the observed effects [45,46]. It is thus very likely that our values for the Kerr angles are larger than they would be in the experiment [47,48].…”

Section: Discussionmentioning

confidence: 91%

Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

2014

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“…On the other hand, for Fe/GaAs, considerable inter‐diffusion takes place during the Fe deposition at room temperature, resulting in intermixed layers of Fe–As, Fe–Ga–As and Fe–Ga at the interface . Introducing an Au capping or hard metallic layer of Ti between the FM/semiconductor layer generally avoids the intermixing and inter‐diffusion of substrate materials up to a certain level; however, the magnetic properties of the FM film degrade. It has been shown that without using the Ti interlayer, the Ni film is depleted by formation of the compound NiAs 2 , resulting in an abrupt decrease of temperature coefficient of resistivity .…”

Section: Introductionmentioning

confidence: 99%

Surface and interface analysis of electrochemically synthesized ferromagnetic/semiconducting Ni/GaAs(001) thin film

Bhatt

Yusuf

2013

Surface & Interface Analysis

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Thin film of ferromagnetic (FM) metal (Ni) on a semiconducting substrate (GaAs), i.e. Ni/GaAs(001), has been synthesized using electrochemical method. The structural, chemical and magnetic properties at the surface and interface have been investigated using X-ray diffraction (XRD)/grazing incidence X-ray reflectivity (GIXRR), X-ray photoelectron spectroscopy (XPS) and magneto-optical Kerr effect (MOKE) techniques, respectively. A crystalline peak observed at 44.4º in the XRD pattern, corresponding to Ni(111) Bragg peak, confirms the monocrystalline nature of the film. The atomic force microscopy image shows small-sized spherical crystallites uniformly deposited over the substrate. The fitted GIXRR pattern confirms a smooth Ni/GaAs(001) film surface with roughness of less than~5 AE 0.4 Å. The micro-structural parameters, such as film thickness, surface and interface roughness, and electron density, are found to be~230 AE 5 Å,~4.5AE 1 Å,~0.5 AE 0.02 Å and 6.38 AE 0.5 (Å À2 ), respectively. The chemical nature of the film at the surface and interface, investigated using a depth profile XPS technique, shows no diffusion of metallic Ga and As into Ni layer or vice versa, confirming a sharp FM/semiconducting Ni/ GaAs(001) interface. The magnetization behavior investigated using MOKE technique at room temperature shows a soft FM nature of the film with coercivity of~75 Oe at the film surface. However, coercivity was found to be~35 Oe at the interface. In addition, the saturation magnetization is also found to decrease at the interface with decreasing Ni layer thickness. The observed magnetization behavior is correlated with structural and chemical changes that occur at the interface of Ni/GaAs(001) film.

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Influence of Au capping layer on the magnetic properties of ultrathin epitaxial Fe3O4/GaAs(001) film

Liu

Zhang

et al. 2011

Journal of Applied Physics

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The effect of the Au capping layer on the magnetic anisotropies and molecular magnetic moment of ultrathin epitaxial Fe3O4 films on GaAs(100) substrate was studied by MO Kerr effect, superconducting quantum interference device, and Ferromagnetic resonance, respectively. The films with and without capping layers show a predominant in-plane uniaxial magnetic anisotropy and a minor fourfold anisotropy. The Au capping layer was found to increase significantly the uniaxial magnetic anisotropy related to the magnetoelastic interactions at the Au/Fe3O4 interface, and unexpectedly reduce saturation molecular magnetization due to the interfacial diffusion between Au layer and Fe3O4 layer.

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Influence of Au capping layer on the magnetic properties of Fe/GaAs(001) ultrathin films

Cited by 7 publications

References 21 publications

Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

Surface and interface analysis of electrochemically synthesized ferromagnetic/semiconducting Ni/GaAs(001) thin film

Influence of Au capping layer on the magnetic properties of ultrathin epitaxial Fe3O4/GaAs(001) film

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