Influence of Ar and O2 atmospheres on the Li atom concentration in the plasma produced by laser ablation of LiNbO3

Abstract

Proton emission from a laser ion source Rev. Sci. Instrum. 83, 02B310 (2012) Optical diagnosis and theoretical simulation of laser induced lead plasma spectrum Phys. Plasmas 19, 013302 (2012) Saturation effects in femtosecond laser ablation of silicon-on-insulator Appl. Phys. Lett. 99, 231108 (2011) Effect of air breakdown with a focusing lens on ultrashort laser ablation Appl. Phys. Lett. 99, 234104 (2011) Additional information on J. Appl. Phys. An analytic kinetic model is elaborated to determine the spatial evolution of the concentration of ground and excited Li atoms ͑up to the 3 2 D level͒ present in the plasma generated by pulsed laser ablation of a LiNbO 3 crystal in gas atmospheres ͑at 1 Torr͒ of different nature, both reactive (O 2 ) and inert ͑Ar͒. Whereas the Li atom population densities in the plasma produced in gas are, in general, higher than those found in vacuum, the concentration of ground Li atoms close to the substrate is similar in vacuum and Ar, though lower than in O 2 . It is suggested that the reabsorption of radiation by the plasma is more important within O 2 than in Ar since the absorber ͑ground Li͒ concentration is higher in O 2 environments. A very reasonable qualitative agreement is found when comparing the Li I-670.8 nm spectral line emission intensity predicted by the model with that obtained experimentally in Ar and O 2 atmospheres.

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

“…As shown in [27], fast diffusing gas-like oxygen generates thermal donors in silicon. On the other hand, it was demonstrated [16] that the presence of O 2 atmosphere in the chamber influences the reactive plasma greatly in terms of increasing the concentration of the Li atoms in plasma. As a result, Li atoms being a shallow, fast-diffusing (D = 2 9 10 -11 cm 2 /s) donor in Si, penetrate into substrate not forming a homogeneous distribution of impurity.…”

“…O 2 gas mixture is a promising environment with respect to improve the quality of the Si-LiNbO 3 interface and to create vacancies-free films [15,16]. In the present work we used the Ar(60 %) ?…”

Growth of polycrystalline InP thin films by the pulsed laser deposition technique

“…This is because at higher substrate temperature a significant quantity of phosphorus that arrives on the substrate suffers stronger preferential evaporation from the growth front. Metallic oxidation has been found in several materials grown by PLD under O 2 ambient [13,14].…”

Sputtering condition effect on structure and properties of LiNbO3 films

“…Also, some authors [4] observed a decrease in the stress when reactive gas pressure rose, and they explained this fact in terms of the high impact of plasma pressure on the formation of lithium (Li) vacancies. In addition, several research groups [11][12][13] used the Ar?O 2 gas mixture as a reactive gas environment successfully and they reported that an increase in oxygen pressure leads to the appearance of Li-poor phase (LiNb 3 O 8 ) as well as reduction in preferred orientation of LiNbO 3 films. Nevertheless, the nature of that phenomena it is still unclear.…”