Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Gao, Yana; Lü, Jianguo; Zhang, Jianhua

doi:10.1016/j.jallcom.2015.06.049

Cited by 16 publications

(10 citation statements)

References 27 publications

(32 reference statements)

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“…[ 1–4 ] Nowadays, the metal–oxide TFT has of increasing attention to replacing the Si‐based electronic devices due to its transparency in visible region and low manufacturing cost. [ 5–8 ] Recently, indium‐gallium‐zinc oxide, [ 9 ] aluminum‐indium‐zinc oxide, [ 10 ] indium‐zinc oxide (IZO), [ 11 ] and indium‐zinc‐tin oxide [ 12 ] are popular metal–oxides used for TFTs for display application.…”

Section: Introductionmentioning

confidence: 99%

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

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ZnO is a well-known oxide semiconductor because of its excellent electrical and optical properties due to its crystalline structure with high carrier mobility and tunable bandgap by alloying. [13,14] Although, ZnO TFT has high carrier density with crystalline structure, it has some limitations, such as instabilities. It is known that the instability of pristine ZnO is related to the grain boundary defects related to oxygen vacancy and Zn interstitial. [15] Most of pristine ZnO TFTs show negative turn-on voltage owing to its high carrier concentration, which limits the application of the TFTs to gate drivers of active-matrix organic light-emitting diode display. Metal doping in ZnO, such as In, Li, N, F, Al, Ga, Hf, La, Mg, Y, and Zr is proposed to improve the performance and/or stability. [16-23] Many ternary and quaternary metal oxide TFTs are reported to improve both stability and mobility, but the results are not promising. Adamopoulos et al. [24] reported high mobility of ZnO TFT (85 cm 2 V −1 s −1) by Li incorporation on spray pyrolyzed ZrO x gate insulator. The increase in mobility by Li incorporation is due to the increase in grain size, but due to high carrier concentration and defects in semiconductor and interface, the offstate currents are high (10 −8 A). Whereas, Park et al. [25] reported La doping in amorphous IZO TFT which reduces the oxygen deficiency and improves the stability but the mobility is low (≈4.2 cm 2 V −1 s −1). Xifeng et al. [26] reported electron mobility ≈1.94 cm 2 V −1 s −1 by Hf doping in amorphous IZO TFT, where Hf works as carrier suppressor and increases the on/off current ratio by lowering the off-currents. Tue et al. [27] reported the Zr doping in amorphous IZO TFT to control the oxygen vacancies due to its lower slandered electron potential to the off current. Jun et al. [28] reported the La doping in amorphous ZTO TFT to improve the subthreshold swing and on/off current ratio. The electronegativity, ionic radius, and dopant-oxygen bond dissociation energy are important to improve the performance and stability of oxide TFT. As the difference of electronegativity between dopants and oxygen rises, the metaloxygen bond energy increases. Besides, the low standard electrode potential (SEP) of metal ion can decrease the traps due to its binding tendency with oxygen. [29] Higher bond dissociation energy leads to the stronger metal-oxygen network and less oxygen vacancy, which helps to improve the stability of the TFTs. [30] A Gd has lower electronegativity (1.20) compare to Zn (1.65), lower SEP (−2.27 V) compare to Zn (−0.76 V) and higher bond dissociation The simultaneous doping effect of Gadolinium (Gd) and Lithium (Li) on zinc oxide (ZnO) thin-film transistor (TFT) by spray pyrolysis using a ZrO x gate insulator is reported. Li doping in ZnO increases mobility significantly, whereas the presence of Gd improves the stability of the device. The Gd ratio in ZnO is varied from 0% to 20% and the Li ratio from 0% to 10%. The optimized ZnO TFT with codoping of 5% Li and 10% Gd exhibits...

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Section: Introductionmentioning

confidence: 99%

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

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“…38,39) However, since the N2O oxidation was carried out in vacuum, it is unlikely that hydroxides dominate in the higher-energy component denoted by OII. Alternatively, it is highly likely that the higher-energy component is mainly composed of the oxygen-deficient region including dangling bonds [40][41][42] . The spatial location of this region was clarified by angle-resolved XPS, as shown in 33 for the sample with direct SiO2 deposition are also plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Control of plasma-CVD SiO₂/InAlN interface by N₂O plasma oxidation

Akazawa

Kitajima

Kitawaki

2019

Jpn. J. Appl. Phys.

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Control of the plasma-CVD SiO2/InAlN interface by N2O plasma oxidation of the InAlN surface was studied. The interface was characterized by both X-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurement of metal-insulatorsemiconductor (MIS) diodes. An excessively long duration of oxidation led to the deterioration of the stoichiometry of the InAlN surface and plasma oxide, resulting in a high density of interface states in the completed MIS diodes. Meanwhile, the surface-localized oxygen deficiency in the plasma oxide layer was observed by XPS. The intensity ratio of the oxygen-deficient component to the fully oxidized component in the O 1s spectrum decreased with increasing oxidation duration. Consequently, there was an optimum oxidation duration. The interface state density was reduced by almost one order in the case of plasma oxidation for an appropriate duration compared with the case of the direct deposition of SiO2 onto InAlN.

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“…Thus, the addition of W into ZTO thin films would result in smooth surfaces, which should be beneficial to TFT performance through reduced carrier scattering at the dielectric–semiconductor interface. 1 The amorphous phase of the WZTO films, which can be derived from the XRD data, may also help to form WZTO films with a smooth surface.…”

Section: Resultsmentioning

confidence: 99%

“…Amorphous oxide semiconductor (AOS) thin lm transistors (TFTs) have received signicant attention for their application in active-matrix at panel displays due to their high mobility, excellent stability, and good optical transparency. 1,2 Although indium gallium zinc oxide (IGZO) has been the preferred semiconductor oxide and is actively commercialized as a channel layer, [3][4][5][6] unfortunately, gallium and indium elements are scarce as naturally available resources. 6,7 Therefore, nongallium-based and indium-free compounds such as zinc tin oxide (ZTO) have attracted more widespread attention.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

Yang

Jiang

et al. 2018

RSC Adv.

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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Cited by 16 publications

References 27 publications

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Control of plasma-CVD SiO₂/InAlN interface by N₂O plasma oxidation

Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Cited by 16 publications

References 27 publications

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation

Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

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Control of plasma-CVD SiO₂/InAlN interface by N₂O plasma oxidation