Influence of Annealing Temperature on Surface Morphological and Electrical Properties of Aluminum Thin Film on Glass Substrate by Vacuum Thermal Evaporator

Wibowo, Kusnanto Mukti; Sahdan, Mohd Zainizan; Asmah, M. T.; Saim, Hashim; Adriyanto, Feri; Suyitno, Suyitno; Hadi, Syamsul

doi:10.1088/1757-899x/226/1/012180

Cited by 8 publications

(3 citation statements)

References 6 publications

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“…More flatted grains are determined by increasing the annealing temperature in good agreement with results obtained from SEM images. Similar results were reported, for instance in aluminum thin films grown by thermal evaporation [44]. However, this is controversial since some other reports suggested a roughness increase with the annealing temperature [45].…”

Section: Morphological Characterizationsupporting

confidence: 84%

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Paz-Corrales¹,

Vilca-Huayhua²,

Aragón³

et al. 2022

Phys. Scr.

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The control of native defects in the ZnO material is strongly important for a wide range of technological applications. In this paper, native defects are tuned via the post-thermal treatment of ZnO films in a high vacuum atmosphere. The microstructure of the as-grown ZnO film shows columnar growth and strongly polar-oriented grains along the c-plane (002). Also, the obtained results indicate that the as-grown film contains a high amount of intrinsic defects and strong lattice distortions. After the thermal annealing, the ZnO films display significant structural changes, which are reflected in their electrical, vibrational, and optical properties. Our findings suggest that these changes were attributed to the selective cleanup effect of the native defects and the partial deoxidation process mainly on the exposed particle surface (at high temperatures) tuned up by the thermal annealing temperature. According to DFT calculations, oxygen vacancies (VO) show lower energy, followed by zinc vacancies (Oi) and oxygen interstitials (VZn) indicating that VO defect is the most stable in ZnO. That sequence of stability could suggest the sequence of the annihilation of those defects, which is in line with our experimental findings.

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Section: Morphological Characterizationsupporting

confidence: 84%

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Paz-Corrales¹,

Vilca-Huayhua²,

Aragón³

et al. 2022

Phys. Scr.

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“…The urbach tailing was observed to decrease with decrease in annealing rate, urbach tail of as prepared films is longest and that of 1degree/min annealing rate is the shortest. From literature, exponential tails are associated with low crystalline films, and disordered amorphous materials because of localized states [42,43]. Therefore, it is evident that the energy below approximately 2.5eV is not sufficient to initiate a interband transition of electrons resulting to urbach tails in region W (weak absorption region).…”

Section: Urbach Energy (Eu) and Band Edge Absorption Tailsmentioning

confidence: 99%

Optical Band Energy, Urbach Energy and Associated Band Tails of Nano Crystalline TiO<sub>2</sub> Films at Different Annealing Rates

Riungu¹,

Mugo²,

Ngaruiya³

et al. 2021

AJN

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Increase in world population has led to more energy demand. Therefore, there is need for utilization of green and renewable energy. Dye sensitized solar cells (DSSCs) based on TiO 2 have attracted a lot of attention as an alternative source as compared to current silicon technology. In this study, TiO 2 thin films were deposited on doped fluorine tin oxide layer (FTO) glass substrates using sol-gel doctor blading technique. The films were annealed at different rates (1step, 2°C/min and 1°C/min) up to a temperature of 450°C followed by sintering at this temperature for 30 minutes. UV-VIS spectrophotometry was employed to probe the absorbance and reflectance of the films. It was found that, the optical parameters, such as the reflectance, the real (ε 1 ) and imaginary (ε 2 ) parts of dielectric constant, skin depth, Urbach energy and the energy gap; all depend on the annealing rate. The skin depth for the samples in visible region were found to increase from 6.319 x 10 -5 to 11.968 x 10 -5 cm -1 due to annealing. The Optical band energy (Eg) decreased from 5.04eV for as deposited film to 4.35eV at annealing rate of 1°C/min for direct allowed and from 2.76 to 2.56 eV for indirect transitions. Urbach tails in weak absorption region decreased with annealing rate. Urbach energies (Eu) were in the range of 432-505 meV for as deposited and annealed films. This was used to account for the disorder of the films. An inverse relation between Urbach energy and optical band energy as result of annealing rate was reported.

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“…The annealing process in [21] led to changes in the surface morphological of the films, increasing the grain size and decreasing the roughness. And when the films annealed from 100 to 400°C, the resistivity of the films depended on roughness and when annealed from 400 to 500°C, the resistivity showed dependence on grain size.…”

Section: Introductionmentioning

confidence: 99%

Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

Merkulova

2021

J. Phys.: Conf. Ser.

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The thin polycrystalline aluminium films were synthesized on monocrystalline silicon substrates by ion-plasma sputtering. The synthesis was carried out at temperatures of 80 and 160°C and deposition rate of 10 and 110 nm/min. As-deposited films were annealed for 15 h at 550°C. The morphology of aluminium films before and after annealing was obtained using SEM images. The surfaces of as-deposited Al thin films, synthesized at high temperature, were uneven, while for low temperature films they were smooth enough with Al hillocks on the top of the film. After thermal annealing, morphology of the films was changed slightly. XRD patterns were obtained to calculate the average Al grain size of as-deposited and annealed films. The XRD analysis showed that an increase in the synthesis temperature leads to an increase in the average grain size from 50 to 84 nm and that increase in the rate of Al film synthesis leads to an increase in the average grain size from 50 to 63 nm. As the result of annealing, the average grain size increased for all samples and the final meaning was from 78 to 140 nm.

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Influence of Annealing Temperature on Surface Morphological and Electrical Properties of Aluminum Thin Film on Glass Substrate by Vacuum Thermal Evaporator

Cited by 8 publications

References 6 publications

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Optical Band Energy, Urbach Energy and Associated Band Tails of Nano Crystalline TiO<sub>2</sub> Films at Different Annealing Rates

Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

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Influence of Annealing Temperature on Surface Morphological and Electrical Properties of Aluminum Thin Film on Glass Substrate by Vacuum Thermal Evaporator

Cited by 8 publications

References 6 publications

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Optical Band Energy, Urbach Energy and Associated Band Tails of Nano Crystalline TiO&lt;sub&gt;2&lt;/sub&gt; Films at Different Annealing Rates

Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

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Optical Band Energy, Urbach Energy and Associated Band Tails of Nano Crystalline TiO<sub>2</sub> Films at Different Annealing Rates