Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films

Göde, Fatma; Güneri, Emine; Kariper, İ. Afşin; Ulutaş, C.; Kırmızıgül, F.; Gümüş, C.

doi:10.1088/1742-6596/326/1/012020

Cited by 10 publications

(7 citation statements)

References 12 publications

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“…This is because when films are annealed they become less strained. Our calculated values of dislocation density and micro strain are close to those reported in literature [24][25][26][27][28].…”

Section: Methodssupporting

confidence: 89%

Structural, morphological and optical properties of annealed ZnS thin films deposited by spray technique

Bouguila

Bchiri

Kraini

et al. 2015

J Mater Sci: Mater Electron

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ZnS thin films were deposited on glass slides by spray pyrolysis technique. The starting solution is a mixture of zinc chloride and thiourea. The substrate temperature was fixed at 350°C. The films were then annealed in the temperature range 300-450°C. Their thickness lies between 560 and 680 nm. We investigate the effect of this annealing on ZnS structural, morphological and optical properties. XRD analysis indicates that ZnS films have a nanocrystalline hexagonal structure with (002) preferential orientation. The grain size increases from 7 to 22 nm with annealing temperature. AFM images indicate a better crystalline phase for the films annealed at 450°C. The films show homogeneous, uniform distribution and surface roughness varying from 5 to 50 nm. The ZnS films exhibit transparency over 60-85 % in the visible and infrared region. The refractive index lies in the range 1.95-2.20. The band gap energy decreases from 3.76 to 2.65 eV for direct transitions. All results have been discussed in terms of annealing temperature. Furthermore, a ZnS/Si heterojunction was also fabricated by depositing n-type ZnS film on p-type Si substrate using spray method. The performance of the heterojunction was reported.

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Section: Methodssupporting

confidence: 89%

Structural, morphological and optical properties of annealed ZnS thin films deposited by spray technique

Bouguila

Bchiri

Kraini

et al. 2015

J Mater Sci: Mater Electron

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“…The average grain size was around 1430 nm for Se of a 157 nm thickness, which is depicted in figure 8 (a). Similar structures have been reported by Gode et al [49] for amorphous Zinc Sulphide thin films.…”

Section: Figure 7 Plot Of Energy Gap (Eg) Versus Thickness (T) For Se Thin Films Of Various Thicknessessupporting

confidence: 89%

Impact of Thickness on the Optical Properties of Selenium Thin Films

Udachan¹,

Ayachit²,

Udachan

et al. 2021

IyU

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Objectives: The primary objective of this investigation is to make a systematic study on the impact of thickness on optical properties, such as energy gap, absorption coefficient, optical density etc., for selenium thin films. Understanding of the band gap energy and its influence on film thickness is of utmost importance in acquiring the intended electrical characterization of semiconducting films. Materials and methods: Ultra-purity selenium (99.99 %) was deposited on glass substrates. During deposition, the glass substrate with its holder were rotated with constant speed to have a smooth coating. Results and discussions: The XRD findings indicate that selenium is amorphous in nature. The optical band gap energy is found to be decreasing form (2.3 to 2eV) with the rise of film thickness in interval (200 to 1000 nm). The band gap energy obeys inverse square law with respect to thickness. Conclusion: We have properly grown thin films of Se below the De Broglie wavelength limit by thermal evaporation in vacuum. The optical density varies directly with film thickness. The absorption coefficients were in the interval (0.5 to 4) × 107m-1. The AFM results confirmed that the Se nano-size increases with the increase in thickness. Both the grain boundaries and sub-grain regions are clearly visible in the SEM micrographs

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“…One of the important parameters in deposition of thin films is the controlled annealing temperature. The annealing temperature plays a key role in electrical properties, which can affect the morphological structures and the hopping quantities [5]. For example, Pathirane et al [6] in 2017 investigated the effect of annealing temperature on the efficacy of the AZO/Ag nanowire junction, both structurally and electrically.…”

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

Shokri

Dejam

2018

Int Nano Lett

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In this work, aluminum-doped zinc oxide (AZO) thin films were deposited by DC sputtering on a glass substrate at a typical sputtering power. It was observed that the AZO structure changes on the ZnO crystalline structure. The measurement of the transparency spectrum on the AZO films shows an optical bandgap about 4.3 eV, which the Al doping into ZnO structure pronounced width localized states by Urbach energy that was 0.42 eV. Moreover, the experimental results on the electrical properties of AZO/Au thin film were evaluated at different temperatures by four-point probe. Also, a simulation analysis on the electrical parameters of the Schottky Au/AZO junction has been done. Our calculation is based on the thermionic emission theory, in which by fitting the numerical results with the experimental current-voltage measurements, the barrier height, ideality factor and saturation current have been obtained. Our result confirmed excellent rectifying characteristics. The extracted result may be useful in designing nanoelectronic devices.

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Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films

Cited by 10 publications

References 12 publications

Structural, morphological and optical properties of annealed ZnS thin films deposited by spray technique

Structural, morphological and optical properties of annealed ZnS thin films deposited by spray technique

Impact of Thickness on the Optical Properties of Selenium Thin Films

Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

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