Influence of annealing temperature on structural and optical properties of sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronics

Teh, Yen Chin; Saif, Ala’eddin A.

doi:10.1016/j.jallcom.2017.01.312

Cited by 19 publications

(8 citation statements)

References 39 publications

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“…2. Comparable results for the current films with the previous work are obtained [14]. Where the sample annealed at 600°C shows an amorphous structure with no crystalline perovskite peak, suggesting poor crystallization of the film.…”

Section: Resultssupporting

confidence: 78%

“…The samples annealed at 700 °C, 800 °C and 900 °C confirmed the existence of perovskite phase structure through the formation of diffraction peaks with orientation (100), ( 110), ( 111), ( 200), ( 201) and (211). A single barium silicate peak, indicated by a blue square, is detected at 29° for the sample annealed at 900 °C only compared to the previous work that appeared at 800 °C also [14]. This indicates the improvement of the fabrication procedure of the films in this work.…”

Section: Resultssupporting

confidence: 46%

“…Acetic acid and 2-methoxyethanol were used as solvent and stabilizer, respectively. The details of solution preparation can be found in previous work [14]. For substrate preperation, a precleaned P-type silicon wafer (100) is used, then a 300 nm SiO2 layer is grown on the wafer to act as a passivation layer, followed by a thin layer of TiO2 with a thickness of ~ 3 nm is sputtered to serve as an adhesive layer between Pt and SiO2 layers, finally, Pt layer with a thickness of 100 nm is sputtered onto the TiO2 and followed by annealing at conductivity of the platinum film.…”

Section: Methodsmentioning

confidence: 99%

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Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films

Saif

Teh

Poopalan

2022

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Ba0.90Gd0.10TiO3 (BGT) thin films have been fabricated in MFM configuration via sol-gel technique at the different annealing temperature. The dielectric parameters of the films are measured using Impedance Analyzer as a function of frequency. It is found that, at frequency 1 kHz, the measured value of e increases from 57 to 264 as the annealing temperature increases from 600 °C to 900 °C, which is correlated to the improved crystallinity and grain size increment. The ferroelectric hysteresis of the films is analyzed using Sawyer-Tower circuit that shows an enhancement for the ferroelectric properties with annealing temperature, which is also confirmed using C-V characteristics. The leakage current of the films is evaluated via Semiconductor Parameter Analyzer (SPA), which shows that at a certain electric field, the leakage current density increases as the annealing temperature increases, that is attributed to the crystallinity and grain size improvement. The conduction mechanism of the films is deeply investigated through different models to find out that the space charge limited conduction (SCLC) mechanism is the controlling conduction process.

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Section: Resultssupporting

confidence: 78%

Section: Resultssupporting

confidence: 46%

Section: Methodsmentioning

confidence: 99%

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Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films

Saif

Teh

Poopalan

2022

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“…Also, the dislocation density and strain are observed to decrease with deposition time. This may be due to the movement of interstitial atoms from its grain boundary to the crystallites, which may lead to reduction in the concentration of lattice defects [30].…”

Section: Structural Propertiesmentioning

confidence: 99%

Effect of silver thickness on structural, optical and morphological properties of nanocrystalline Ag/NiO thin films

2018

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Silver (Ag) nanolayers were deposited on nickel oxide (NiO) thin films by DC magnetron sputtering. The thickness of Ag layers was in range of 20-80 nm by variation of deposition time between 10 and 40 s. X-ray diffraction results showed that the crystalline properties of the Ag/NiO films improved by increasing the Ag film thickness. Also, atomic force microscopy and field emission scanning electron microscopy images demonstrated that the surface morphology of the films was highly affected by film thickness. The film thickness and the size of particles change by elevating the Ag deposition times. The composition of films was determined by Rutherford back scattering spectroscopy. The transmission of light was gradually reduced by augmentation of Ag films thickness. Furthermore; the optical band gap of the films was also calculated from the transmittance spectra.

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“…In Gd 3+ doped BaTiO 3 , substituting Gd 3+ ions on the Ba 2+ or Ti 3+ site in the crystalline structure is proportional to the doping proportion, thus influencing the material's electrical and optical features [9]. A previous study by our team found that Ba 0.9 Gd 0.1 TiO 3 has a significant transmittance within the visible spectrum and a relatively high energy band gap [10]. Moreover, it is reported by FASASI et al [11] that Gd 3+ doped BaTiO 3 thin films show a high index of refractive.…”

Section: Introductionmentioning

confidence: 98%

A study on the refractive index of sol-gel Ba1-xGdxTiO3 thin films using spectroscopic ellipsometry

A. Saif,

Teh,

Poopalan

2023

Matéria (Rio J.)

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Ba 1-x Gd x TiO 3 thin films have been fabricated at different Gd 3+ ionic concentrations, film thicknesses, and annealing temperatures using the sol-gel method. The refractive index of the Ba 1-x Gd x TiO 3 films on a silicon substrate is characterized using Spectroscopic Ellipsometry (SE), where the ellipsometry angles Ψ and Δ are fitted very well with the Cauchy dispersion model. The results show that the refractive index at 632.8 nm decreases from 2.18 to 1.892 with the increase of the Gd 3+ ratio, while it increases with film thickness and annealing temperature. This trend for refractive index variation is explained based on interatomic spacing and density densification of the films. Using Wemple-Di Domenico (WDD) model shows that the dispersion energy increases with film thickness and annealing temperature and decreases with Gd 3+ doping. The relatively high refractive index of the samples supports the possibility of using Ba 1-x Gd x TiO 3 thin films as AR coating for solar cells.

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Influence of annealing temperature on structural and optical properties of sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronics

Cited by 19 publications

References 39 publications

Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films

Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films

Effect of silver thickness on structural, optical and morphological properties of nanocrystalline Ag/NiO thin films

A study on the refractive index of sol-gel Ba1-xGdxTiO3 thin films using spectroscopic ellipsometry

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