Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes

Ravikumar, K.; Agilan, S.; Muthukumarasamy, N.; Raja, M.; Lakshmanan, Raja; Ganesh, R. Sankar

doi:10.1007/s12633-017-9643-9

Cited by 11 publications

(5 citation statements)

References 40 publications

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“…[89]). Similar behavior has been observed by Bari et al [46], while overall increase of activation energy with increasing substrate temperature has been previously observed in other study [31].…”

Section: Sur Sursupporting

confidence: 91%

“…Comparable values of optical transparency have been previously reported in several works (e.g. [5,46,47]). Based on the above-mentioned observations, all the TDO thin films investigated here exhibit excellent optical transparency in the visible region, whereas the TCO applications such as optoelectronic devices require at least 80% optical transparency [48,49].…”

Section: Optical Properties By Optical Spectroscopic Analysissupporting

confidence: 84%

“…For the TDO thin films spray deposited at 450 °C-500 °C, comparable values of the optical bandgap have been reported previously in some studies (e.g. [46,58,59]) that are contradictory to the experimental data reported in other previous studies (e.g. [60][61][62]).…”

Section: Using This Expression the Absorption Coefficient ( )supporting

confidence: 70%

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Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO₂ nanocrystalline thin films prepared at various spray-deposition temperatures

Badr

2020

Phys. Scr.

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Nanostructured SnO2 thin films were synthesized at various substrate temperatures using a modified chemical spray pyrolysis (MCSP) technique. The x-ray diffraction (XRD) patterns confirmed the presence of a rutile SnO2 with tetragonal structure for all the resultant film samples. The XRD results ascertained increase in the grain growth rate and consequent enhancement in crystallinity with increasing the spray-deposition temperature. The optical spectroscopic analysis revealed a significant increase in the optical transmission within the visible region as well as a considerable increase in the optical bandgap by increasing the deposition temperature. However, the spectral distribution of the absorption coefficient ascertained the dominance of direct allowed transition for the SnO2 film samples. The analysis of the current-voltage characteristic curves revealed that the variation of the spray-deposition temperature strongly influences the photosensitivity of the film samples. Based on the electrical results, these film samples reveal a semiconductor behaviour of the transport property over the entire investigated range of the working temperature, with two different conduction mechanisms. The optical and electrical results were combined to evaluate the influence of varying the deposition temperature on the figure of merit (FOM) factor for the SnO2 film samples.

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Section: Sur Sursupporting

confidence: 91%

Section: Optical Properties By Optical Spectroscopic Analysissupporting

confidence: 84%

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Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO₂ nanocrystalline thin films prepared at various spray-deposition temperatures

Badr

2020

Phys. Scr.

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“…Among the different TCOs, Tin oxide (SnO 2 ), the most stable oxide of tin, is a metal oxide semiconductor that finds its use in a number of applications in the field of display devices, solar cells, light-emitting diodes, laser diodes, and solid-state gas sensors due to its interesting wide band gap, and its excellent thermal, mechanical and chemical stability [4,5]. SnO 2 is an n-type wide bandgap semiconductor oxide with a high direct bandgap (Eg) in the 3.6 -3.9 eV range at room temperature, making it extremely transparent in the visible region [6,7]. Several techniques, including magnetron sputtering [8], chemical vapor deposition [9], atomic layer deposition [10], pulsed laser deposition [11], spray pyrolysis [12], and sol-gel [13], can be used to develop SnO 2 that is either undoped or doped.…”

Section: Introductionmentioning

confidence: 99%

Computational and experimental studies on SnO2 thin films at various temperatures

Gurushankar,

Grishina,

Gohulkumar

et al. 2023

Computer Optics

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Tin oxide (SnO2) thin films was prepared by dip-coating technique at various bath temperatures (313, 333, 353 and 373 K) and annealed at 673 K in this study. And the obtained results were studied and correlated with the computational method. Scanning electron microscopy (SEM) investigation demonstrated that the prepared samples are spherical with agglomeration. The elemental analysis (EDAX) confirms the presence of Sn and O. Further, the SnO2 thin films microstructures are simulated, their thermodynamic and surface properties have been calculated. Micro-Raman spectra were recorded for the prepared samples. Micro-Raman results exhibit the first-order Raman mode E1gsub> (475 cm−1) indicating that the grown SnO2 belongs to the rutile structure. In addition, the envelope method used for studying optical characteristics of the thin films from the transmittance spectra. The semiconducting nature of the films has been noticed from linear I-V characteristics. Furthermore, the electrical conductivity studies suggest that the highest conductivity samples acquire the lowest activation energy and their values are also in the semiconducting range.

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“…But, the various device performance parameters such as responsivity, detectivity, etc need a significant improvement which can be achieved by modifying the surface or defects present in the SnO 2 NWs. Various groups have explored the effect of annealing at different conditions on SnO 2 material [1,12,13]. However, further study on modifications of defects after annealing in air is required to extract the optimized UV detector performance.…”

Section: Introductionmentioning

confidence: 99%

Improved photodetector performance of SnO₂ nanowire by optimized air annealing

Chetri¹,

Dhar²

2020

Semicond. Sci. Technol.

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This study demonstrates the fabrication of uniform and vertically oriented SnO 2 nanowires (NWs) using glancing angle deposition technique. The SnO 2 NW was then subjected to different annealing temperatures of 350 °C, 550 °C, 650 °C, 750 °C and 900 °C in air, each for 1 h to discover the best optimized photodetector performance. The 650 °C sample showed the best photodetector material properties, with highest optical absorption, crystallinity, and reduced dislocation density. As such, the photodetector based on annealed 650 °C device exhibited an obvious best performance in terms of high responsivity as compared to other annealed samples. Also, a large UV responsivity of 2.58 A W −1 at 300 nm with high detectivity of 64.13×10 10 Jones and a low noise equivalent power of 6.56 pW was observed for 650 °C sample. Thus, the increase in the crystallinity along with less scattering of photogenerated carriers enhanced the photoconductivity of 650 °C annealed UV photodetector.

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Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes

Cited by 11 publications

References 40 publications

Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO₂ nanocrystalline thin films prepared at various spray-deposition temperatures

Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO₂ nanocrystalline thin films prepared at various spray-deposition temperatures

Computational and experimental studies on SnO2 thin films at various temperatures

Improved photodetector performance of SnO₂ nanowire by optimized air annealing

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Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes

Cited by 11 publications

References 40 publications

Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO2 nanocrystalline thin films prepared at various spray-deposition temperatures

Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO2 nanocrystalline thin films prepared at various spray-deposition temperatures

Computational and experimental studies on SnO2 thin films at various temperatures

Improved photodetector performance of SnO2 nanowire by optimized air annealing

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Product

Resources

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Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO₂ nanocrystalline thin films prepared at various spray-deposition temperatures

Controlled optoelectronic properties and abrupt change in photosensitivity by suppressing density of oxygen vacancies in SnO₂ nanocrystalline thin films prepared at various spray-deposition temperatures

Improved photodetector performance of SnO₂ nanowire by optimized air annealing