2012
DOI: 10.1007/s10854-012-0830-6
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Influence of annealing temperature and oxygen atmosphere on the optical and photoluminescence properties of BaTiO3 amorphous thin films prepared by sol–gel method

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Cited by 17 publications
(10 citation statements)
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“…These emissions are not due to direct transition of electrons between BTO valence and conduction bands, but they are instead attributed to the formation of lattice defects such as oxygen vacancies, excess oxygen and grain boundaries. [11,12] It was shown earlier that yellow intensity can increase as grain size decreases to the nanometer level, [11] which is consistent with the current results.…”
supporting
confidence: 92%
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“…These emissions are not due to direct transition of electrons between BTO valence and conduction bands, but they are instead attributed to the formation of lattice defects such as oxygen vacancies, excess oxygen and grain boundaries. [11,12] It was shown earlier that yellow intensity can increase as grain size decreases to the nanometer level, [11] which is consistent with the current results.…”
supporting
confidence: 92%
“…[9] Moreover, BTO has been widely investigated for its optical properties, [10] photoluminescence (PL), [11,12] photocatalysis, [13] proton conductivity [14] and phase transformations. [15][16][17][18][19][20][21][22][23][24] BTO transforms from a rhombohedral structure to an orthorhombic phase at − 90°C, to a ferroelectric tetragonal phase at 5°C, and to a paraelectric cubic phase at 120°C under ambient pressure.…”
mentioning
confidence: 99%
“…The visible emission peak at 417 nm was observed in the films BT 1 , BT 1.5 , BT 2 and BT 2.5 respectively. It can be related to the formation of sub band gap defects in the films [38]. The blue emission peaks at 480 nm is due to delocalized electronic levels near the valence band and conduction band.…”
Section: Photoluminescence Studiesmentioning
confidence: 99%
“…Extrapolating the linear portion of the curve on to the X-axis gives the energy band gap of the films. The optical band gap decreased from 4.33 eV for film annealed at 773 K to 3.43 eV at 1173 K. This decrease in the optical band gap can be due to the formation of sub-band gap defects in the films when annealed in oxygen [35].…”
Section: Optical Studiesmentioning
confidence: 91%