Influence of annealing on the structural and optical properties of ZnO films grown by MOCVD

Raman scattering and electrical properties of Zn1−xMnxO films

“…[1] Currently, in the quest for materials involving charge and spin degrees of freedom of electrons in a single substance, since the theoretical calculations predicted that ZnO doped with transition metals (TMs, e.g. Mn, Co, Fe, Ni, etc.)…”

Electrical characterization of DC sputtered ZnO/p-Si heterojunction

“…ZnO thin films can be deposited on different substrates using many kinds of techniques including chemical vapor deposition, spray pyrolysis, electrodeposition, pulsed laser deposition and DC and RF magnetron sputtering [8][9][10][11][12][13][14][15][16]. For instance, Bacaksiz et al [9] have formed ZnO thin films using zinc chloride, zinc acetate and zinc nitrate precursors by spray pyrolysis technique on glass substrates and determined their structural and optical properties by X-ray diffraction (XRD), scanning electron microscope (SEM) and optical transmittance spectra.…”

Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

“…Undoped ZnO is usually n-type conductive, which is associated with the presence of native point defects (e.g., oxygen vacancies (V O ) and interstitial zinc (Zn i )) [4] or hydrogen impurities [5], but the fabrication of stable and reproducible p-type ZnO has been difficult due to the self-compensation and low solubility of acceptor dopants. In recent years, several groups have reported the growth of p-type ZnO by doping group V elements N [6,7], P [8], As [9] and Sb [10]. Among the group V elements, nitrogen has been regarded as the most suitable dopant for p-type ZnO due to its similar atomic radius to that of oxygen.…”