Influence of ammoniating temperature on Co-catalyzed GaN nanowires

Qin, Lixia; Xue, Chengshan; Zhuang, Huizhao; Yang, Zhaozhu; Li, H.; Chen, J.H.; Wang, Y.

doi:10.1007/s00339-007-4358-1

Cited by 10 publications

(2 citation statements)

References 18 publications

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“…Vapor-liquid-solid (VLS) growth is mostly reported in the fabrication of semiconductor nanowires (NWs) by which the growth is driven by a metal catalyst [5][6][7][8]. The selection of catalyst is therefore important in VLS NWs growth.…”

Section: Introductionmentioning

confidence: 99%

Growth behaviors of platinum-assisted GaN nanostructures in vapor–liquid–solid mechanism

Tan

Yam

Hassan

2015

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

Growth behaviors of platinum-assisted GaN nanostructures in vapor–liquid–solid mechanism

Tan

Yam

Hassan

2015

Materials Science in Semiconductor Processing

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“…Li et al reported the repeatable transformation of the CVD-grown GaN structures to Ga 2 O 3 structures by an annealing in air and back to GaN structures by an annealing in ammonia [ 23 ]. Moreover, there are several studies reporting the formation of GaN nanostructures by annealing the sputtered Ga 2 O 3 layer on metal-coated Si substrates in ammonia [ 24 - 27 ]. To our knowledge, the nitridation of the electrochemically deposited Ga 2 O 3 structures on bare Si substrates to form GaN nanostructures without the assistance of metal catalyzers does not appear in the published literature.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

2014

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Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

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Synthesis and Characterization of Glomerate GaN Nanowires

et al. 2009

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Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga2O3/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy and Fourier transformed infrared spectra were used to characterize the morphology, crystallinity and microstructure of the as-synthesized samples. Our results show that the samples are of hexagonal wurtzite structure. For the majority of GaN nanowires, the length is up to tens of microns and the diameter is in the range of 50–200 nm. The growth process of the GaN nanowires is dominated by Co–Ga–N alloy mechanism.

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Influence of ammoniating temperature on Co-catalyzed GaN nanowires

Cited by 10 publications

References 18 publications

Growth behaviors of platinum-assisted GaN nanostructures in vapor–liquid–solid mechanism

Growth behaviors of platinum-assisted GaN nanostructures in vapor–liquid–solid mechanism

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

Synthesis and Characterization of Glomerate GaN Nanowires

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