Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy

Künzel, H.; Ploog, K.; Wünstel, K.; Zhou, Bangdi

doi:10.1007/bf02656681

Cited by 38 publications

(5 citation statements)

References 19 publications

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“…These values agree well with deep state energies previously published in the literature for similarly doped AlGaAs samples. 24,25 The linear fit of the lower temperature data (solid line in Fig. 4) allows one to extract the n ∞ from the intercept at 1/T = 0 and the E s of the shallow states from the slope of the line for each illumination time.…”

Section: Density Of Statesmentioning

confidence: 99%

Band-tail shape and transport near the metal-insulator transition in Si-dopedAl0.3Ga0.7As

Misuraca

Trbovic

et al. 2010

Phys. Rev. B

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In the present work, an infrared LED is used to photodope MBE-grown Si:Al 0.3 Ga 0.7 As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si (1x10 19 cm -3 for sample 1 (S1) and 9x10 17 cm -3 for sample 2 (S2)) and vary the effective electron density between 10 14 and 10 18 cm -3 . The metal-insulator transition (MIT) for S1 is found to occur at a critical carrier concentration of 5.7x10 16 cm -3 at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band-tail of the density of states (DOS) in Al 0.3 Ga 0.7 As is found electrically through transport measurements. It is determined to have a power law dependence, with an exponent of -1.25 for S1 and -1.38 for S2.

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Section: Density Of Statesmentioning

confidence: 99%

Band-tail shape and transport near the metal-insulator transition in Si-dopedAl0.3Ga0.7As

Misuraca

Trbovic

et al. 2010

Phys. Rev. B

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“…In the analog technique, it is most common to hold the Ga source temperature fixed and to vary the Al temperature to achieve the desired mole fraction. 17 We employ the analog growth technique for all of the samples discussed here. For the higher mole fraction samples (xу0.5), we vary the Ga temperature while holding the Al temperature fixed in order to maintain growth rates on the order of 1 m/h.…”

Section: Introductionmentioning

confidence: 99%

Dependence of current-voltage characteristics on Al mole fraction in GaAs/AlxGa1−xAs asymmetric double barrier structures

Blue¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Due to the presence of DX centers, the electrons in this neutral region can be frozen at low temperatures (below 100K) 16,17 ; no parallel conduction is observed in magnetotransport measurements (not shown).…”

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confidence: 99%

“…1 (a) we show the conduction band profile for wafer B simulated using the Nextnano software package 12 . We also show the ionized donor density for wafers A, B, and C. Three distinct regions exist in the doping layer for each wafer: Due to the presence of DX centers, the electrons in this neutral region can be frozen at low temperatures (below 100K) 16,17 ; no parallel conduction is observed in magnetotransport measurements (not shown).…”

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confidence: 99%

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Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/AlxGa1−xAs Nanostructures

et al. 2018

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We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon doping density has been varied from 2.4 × 10 18 cm −3 (critically doped) to 6.0 × 10 18 cm −3 (overdoped).Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short time scale telegraphic noise and long time scale conductance drift with decreased doping density was observed. These measurements indicate that the neutral doping region plays a significant role in charge noise and conductance drift. arXiv:1709.06125v1 [cond-mat.mes-hall]

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Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy

Cited by 38 publications

References 19 publications

Band-tail shape and transport near the metal-insulator transition in Si-dopedAl0.3Ga0.7As

Band-tail shape and transport near the metal-insulator transition in Si-dopedAl0.3Ga0.7As

Dependence of current-voltage characteristics on Al mole fraction in GaAs/AlxGa1−xAs asymmetric double barrier structures

Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/AlxGa1−xAs Nanostructures

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