Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices

Lima, Lucas Petersen Barbosa; Diniz, J. A.; Radtke, C.; Santos, Marcos V. Puydinger dos; Dói, I.; Fo, J. Godoy

doi:10.1116/1.4817178

Cited by 10 publications

(13 citation statements)

References 24 publications

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“…Thus, minimum unsaturated bonds exist at the interface. Lima et al [27] showed that Al/TiN is suitable to use for complementary metaloxide-semiconductor devices.…”

Section: Reviewmentioning

confidence: 99%

“…Thus, minimum unsaturated bonds exist at the interface. Lima et al [27] showed that Al/TiN is suitable to use for complementary metaloxide-semiconductor devices.Kaufmann et al [28] studied the SiC Schottky diode as a particle detector. The authors fabricated Schottky junctions by depositing dielectric HfO 2 and TiO 2 insulating layers using atomic layer deposition onto a silicon carbide substrate.…”

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confidence: 99%

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Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…Thus, minimum unsaturated bonds exist at the interface. Lima et al [27] showed that Al/TiN is suitable to use for complementary metaloxide-semiconductor devices.…”

Section: Reviewmentioning

confidence: 99%

mentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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“…22,23 An aluminum cap layer is deposited by DC sputtering to reduce the gate stack series resistance and to avoid further incorporation of oxygen in the TiN electrode in the postprocessing steps. 9 The gate last integration scheme was employed to prevent parameter shifts in the TiN electrode after high temperature annealing. 24,25 Self-alignment using chemical-mechanical planarization step is still being calibrated in our lab, which impacts our design choices.…”

Section: B Finfet Device Fabricationmentioning

confidence: 99%

“…11,12 Focused ion beam (FIB) for device fabrication has two main approaches: milling and lithography. While several works have been carried out using milling and ion-assisted material deposition for transistor fabrication, [7][8][9]13,14 here we explore a maskless and resistless lithography method for nanoscale multiple fin definition, which is used for FinFET prototype fabrication.…”

Section: Introductionmentioning

confidence: 99%

Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

Leonhardt

Santos

Diniz

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…2,3 Variations on TiN properties have been reported for different deposition processes. 7 Several techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), and sputtering have been investigated for obtaining TiN films. Nowadays, atomic layer deposition (ALD) system is being widely used for TiN deposition due to the requirement of conformal layers for 3D channel structures, like tri-gates and finFET's.…”

Section: Introductionmentioning

confidence: 99%

Metal gate work function tuning by Al incorporation in TiN

Lima

Dekkers

Lisoni

et al. 2014

Journal of Applied Physics

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Articles you may be interested inDetermining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy Appl. Phys. Lett. 100, 112906 (2012); 10.1063/1.3695166 Photoinduced charge-trapping phenomena in metal/high-k gate stack structures studied by synchrotron radiation photoemission spectroscopy Appl. Phys. Lett. 96, 162902 (2010); 10.1063/1.3409162 Thermally stable high effective work function TaCN thin films for metal gate electrode applications Titanium nitride (TiN) films have been used as gate electrode on metal-oxide-semiconductor (MOS) devices. TiN effective work function (EWF) values have been often reported as suitable for pMOS. For nMOS devices, a gate electrode with sufficient low EWF value with a similar robustness as TiN is a challenge. Thus, in this work, aluminum (Al) is incorporated into the TiN layer to reduce the EWF values, which allows the use of this electrode in nMOS devices. Titanium aluminum (TiAl), Al, and aluminum nitride (AlN) layers were introduced between the high-k (HfO 2 ) dielectric and TiN electrode as Al diffusion sources. Pt/TiN (with Al diffusion) and Pt/TiN/TiAl/TiN structures were obtained and TiN EWF values were reduced of 0.37 eV and 1.09 eV, respectively. The study of TiN/AlN/HfO 2 /SiO 2 /Si/Al structures demonstrated that AlN layer can be used as an alternative film for TiN EWF tuning. A decrease of 0.26 eV and 0.45 eV on TiN EWF values were extracted from AlN/TiN stack and AlN/TiN laminate stack, respectively. AlN/TiN laminate structures have been shown to be more effective to reduce the TiN work function than just increasing the AlN thickness. V C 2014 AIP Publishing LLC.

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Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices

Cited by 10 publications

References 24 publications

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

Metal gate work function tuning by Al incorporation in TiN

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