Influence of Al doping on the structural, morphological and opto-electrical properties of spray deposited lead sulfide thin films

Rajashree, C.; Balu, A. R.; Nagarethinam, V. S.

doi:10.1007/s10854-016-4778-9

Cited by 21 publications

(7 citation statements)

References 31 publications

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“…Moss‐Burstein effect also gives an alternative justification. According to Moss‐Burstein effect, this increase in optical band gap with Sn incorporation in the present investigation may be attributed to an increment of electron in the conduction band by elating the Fermi level due to dopant elements . It is important to point out here that semiconductor materials with band gap energy from 1 to 1.5 eV are appropriate for attaining reasonable energy conversion efficiency ≈30% when used as an absorber layer for PV devices .…”

Section: Resultssupporting

confidence: 48%

“…The small emission bands at 405 nm are related to the transition of electrons from the conduction band edge to holes, tapped at interstitial Pb 2+ sites . Emission peak at 462 nm ascribed by trapped electrons transition from the donor level to the valence band . The PL peak intensity increment was observed with Sn concentration, which might be because of the passivation of the surface vacancies and nonradiative recombination sites .…”

Section: Resultsmentioning

confidence: 93%

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Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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In the present report, undoped and tin (Sn)-doped lead sulfide thin films were synthesized via chemical bath deposition method. The effects of Sn molar concentration on the optical, structural, and morphological properties were systematically studied. The concentration of Sn in the chemical bath was characterized by the ratio of [Sn +2 ]/[Pb +2 ] and varied from 0 to 15 at.%. Both doped and undoped thin films were polycrystalline in nature with a face-centered cubic crystal structure; however, the preferred orientations of the crystallites were varied along the (111) and (200) planes with Sn-doping concentration. The X-ray powder diffraction results also showed that peak intensities and the crystalline size were decreased with increasing Sn concentration.The lattice constant varied with Sn concentration and found in the range of 6.020 to 5.944 Å. The variation of Sn concentration in PbS:Sn thin films were confirmed by energy dispersive X-ray analyses study. The scanning electron microscope and atomic force microscopy studies revealed that Sn doping had a critical role on the surface roughness and morphology of the PbS:Sn thin films. The optical band gap study showed that the band gap of PbS:Sn thin films were engineered from 0.676 to 1.345 eV because of incorporation of Sn +2 ions via cost-effective chemical route.Room temperature photoluminescence spectra showed a well-defined peak at 427 nm and shoulders at 405 and 462 nm for all Sn-doped and undoped PbS samples.

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Section: Resultssupporting

confidence: 48%

Section: Resultsmentioning

confidence: 93%

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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“…In many previous works, the E g was found to be varying inversely with the crystallite size. 50,51 The value of E g for these sets of lms demonstrates that they are good semiconductor candidates for absorbing visible light in optoelectronic and photovoltaic applications. Fig.…”

Section: Optical Propertiesmentioning

confidence: 96%

The structure and photoelectrochemical activity of Cr-doped PbS thin films grown by chemical bath deposition

2020

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“…The PL spectrum of PbS:Ag thin films deposited with different Ag doping concentrations 2%, 4%, 6%, and 8% are presented in Figure . The emission peak should be in the range of 520 to 600 nm, which conforms to the PbS structure . PL spectra were composed of one strong visible emission band positioned at about 580 nm in all the prepared PbS:Ag films.…”

Section: Resultsmentioning

confidence: 78%

“…The emission peak should be in the range of 520 to 600 nm, which conforms to the PbS structure. 44 PL spectra were composed of one strong visible emission band positioned at about 580 nm in all the prepared PbS:Ag films. The strong peak observed at 580 nm corresponds to green emission.…”

Section: Photoluminescence Spectramentioning

confidence: 99%

Ag‐doped PbS thin films by nebulizer spray pyrolysis for solar cells

Rosario¹,

Kulandaisamy²,

Kumar

et al. 2020

Int J Energy Res

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Summary Silver (Ag)‐doped PbS (PbS:Ag) thin films of 616 to 745 nm in thickness were prepared on glass substrates via cost‐effective nebulizer spray method by adding different Ag levels from 2% to 8% at 200°C. For solar cell applications, the effect of Ag doping concentration on structural, morphological, optical, photoluminescence, and electrical chattels of PbS thin film has been studied. X‐ray diffraction pattern confirmed the polycrystalline behavior of the prepared PbS:Ag films with cubic crystalline nature. The crystalline size and texture coefficient were increased by increasing Ag doping concentration. From the morphological studies by scanning electron microscope (SEM) and atomic force microscope (AFM), the grain size of the films and surface roughness values were increased for the increase in Ag doping concentration. EDS spectra confirmed the existence of Ag, Pb, and S elements in the select 6% Ag‐doped PbS film. Peaks related to silver oxide started to emerge at 6% of Ag doping level. The optical direct band gap value was reduced from 1.51 to 1.17 eV for Ag doping from 2% to 6% and thereby slightly increased as 1.79 eV for 8% Ag doping level. For all PbS:Ag films, the photoluminescence spectrum emitted a strong near band edge (NBE) emission at approximately 580 nm, meaning better optical quality. Hall effect measurements evidenced that Ag doping provides enhancement on the characteristics of mobility, carrier concentration, and resistivity with p‐type conducting nature. The observed high carrier concentration and low resistivity values were 4.32 × 1014 cm−3 and 80 Ωcm, for 6% Ag‐doped PbS film. The FTO/CdS/PbS:Ag heterostructure solar cell was formed from 6% Ag‐doped film.

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Influence of Al doping on the structural, morphological and opto-electrical properties of spray deposited lead sulfide thin films

Cited by 21 publications

References 31 publications

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

The structure and photoelectrochemical activity of Cr-doped PbS thin films grown by chemical bath deposition

Ag‐doped PbS thin films by nebulizer spray pyrolysis for solar cells

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