Superconducting thin films of composition Mg 1−x Al x B 2 with 0 Յ x Ͻ 0.5 were prepared in situ by sublimation of Mg combined with B and Al magnetron sputtering. The critical temperature T c decreased linearly with x up to 0.4. For 0.4Ͻ x Ͻ 0.5 the formation of a plateaulike feature at a T c Ϸ 12 K was observed. This effect is supposed to be due to the incipient formation of the superstructure MgAlB 4 with ordered alternating Mg and Al planes separated by B planes. To detailedly study the influence of Al doping on the electron-phonon coupling in the polycrystalline films with a preferred c-axis texture quasiparticle tunneling experiments were performed on planar tunnel junctions with natural thermal oxide or artificial aluminum oxide tunnel barriers. Differential conductance measurements at low-bias voltage and low temperature of superconductor-insulatorsuperconductor tunnel junctions allowed the direct determination of the energy gap of the Fermi surface sheet. The energy gap decreased linearly with decreasing T c of the films in agreement with the model of band filling. Whereas all the tunneling studies published so far mainly revealed features of the two energy gaps, the observation of phonon-induced structures in the differential conductance measurements at high bias voltage, i.e., in the phonon region, in this study enabled the important determination of the energy-dependent Eliashberg function ␣ 2 F of the Fermi surface sheet for various Al doping levels. Compared to the undoped MgB 2 , significant changes in ␣ 2 F could be observed that were confirmed by first-principles calculations.