Influence of active region thickness on the performance of bulk heterojunction solar cells: electrical modeling and simulation

Movla, Hossein; Shahalizad, Afshin; Abad, A. Rahmat Nezam

doi:10.1007/s11082-014-9938-7

Cited by 10 publications

(5 citation statements)

References 38 publications

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“…As the experimental results have previously shown that doping can affect the performance of BHJ SCs 11,12 , it can be expected that the characteristic parameters of these devices are highly dependent on the choice of functional materials and dopants 12 . In addition, as a useful step before the device fabrication, numerical models and simulations can allow for predicting and understanding the optoelectronic behaviors of the functional materials in the device structure upon p-type and n-type doping [13][14][15] . This would also help to study different dopants and find the optimal doping levels to achieve the highest efficiency possible.…”

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confidence: 99%

A numerical study on the relationship between the doping and performance in P3HT:PCBM organic bulk heterojunction solar cells

Movla

Shahalizad²,

Asgari

2023

Sci Rep

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In this study, we perform a simulation analysis to investigate the influence of p-type and n-type doping concentration in BHJ SCs using the drift-diffusion model. Specifically, we investigate the effect of doping on the charge carrier transport and calculate the above-mentioned device parameters. We show that doping the active layer can increase the cell characteristic parameters, that the results are in an excellent agreement with the experimental results previously reported in the literature. We also show that doping causes space charge effects which subsequently lead to redistribution of the internal electric field in the device. Our results reveal that higher doping levels lead to screening the electrical field in the P3HT:PCBM active region. This in turn forces the charge carrier transport to be solely dominated by the diffusion, consequently decreasing the performance of the device. We also show that doping of the active layer to an optimum level can effectively improve the charge transport. Moreover, we show that doping can create an Ohmic contact between the organic and cathode interface. Additionally, the charge carrier concentration profile shows that by increasing the dopant concentration, the $$J_{sc}$$ J sc can be improved remarkably. Upon doping the active layer, this indicates that illumination can simply reduce the series resistance in the device.

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confidence: 99%

A numerical study on the relationship between the doping and performance in P3HT:PCBM organic bulk heterojunction solar cells

Movla

Shahalizad²,

Asgari

2023

Sci Rep

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“…In this model we used a simple model and we assumed that hole current and electron current follow in different organic polymer. The mobility of charge carriers are kept constant at 10 −4 cm/V s in accordance to literature values for P3HT and PCBM [12,14]. The Poisson equation is:…”

Section: The Electrical Modelmentioning

confidence: 99%

“…The number of the carriers which can be extracted from the devices equals the total number of photogenerated carriers multiplied by the ratio of the average drift length to the thickness of the sample. Now the overall photogenerated current (J L ) will be given as [11,14],…”

Section: Illuminated Currentmentioning

confidence: 99%

“…Tel. : +98 9146352945. understanding and also, efficient optimization of organic optoelectronics devices [11][12][13][14]. In the study of bulk heterojunction solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM), P3HT:PCBM device performance is strongly dependent on the thickness of active region, fabrication methods, materials in use, encapsulation, etc.…”

Section: Introductionmentioning

confidence: 99%

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A model for studying the performance of P3HT:PCBM organic bulk heterojunction solar cells

Movla

Rafi

2015

Optik

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“…[8] It was found that the structures and the properties of organic solar cells (OSCs) highly depend upon both the fabrication methods and materials in use, thus many experiments, models and numerical simulations have been developed to understand the physical behavior and performance of organic devices. [9][10][11] In addition to experimental studies, numerical device models for the electronic and optical processes allow researchers a good understanding and also efficient optimization of organic optoelectronics devices. [12][13][14][15] To model BHJ solar cells, it was proposed to start with the metal-insulator-metal (MIM) scheme, where the active region of the cell, which consists of the bulk heterojunction layer, is considered as one virtual semiconductor with the properties of both the donor and acceptor.…”

Section: Introductionmentioning

confidence: 99%

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

Movla¹,

Babazadeh²

2017

Chinese Phys. B

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In this study, we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM). Organic semiconductors are also known to be not pure and they have defects and impurities, some of them are being charged and act as p-type or n-type dopants. Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings (N d ) that consist of 5 × 10 17 cm −3 , 10 18 cm −3 , and 5 × 10 18 cm −3 . We perform the analysis of the doping concentration through the drift-diffusion model, and calculate the current and voltage doping dependency. We find that at three different n-dopant levels, optimum p-type doping is about N p = 6 × 10 18 cm −3 . Simulation results have shown that by increasing doping level, V oc monotonically increases by doping. Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N p = 3 × 10 18 cm −3 . Moreover, this paper demonstrates that the optimum value for the p-doping is about N p = 6 × 10 18 cm −3 and optimum value for n-dopant is N d = 10 18 cm −3 , respectively. The simulated results confirm that doping considerably affects the performance of organic solar cells.

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Influence of active region thickness on the performance of bulk heterojunction solar cells: electrical modeling and simulation

Cited by 10 publications

References 38 publications

A numerical study on the relationship between the doping and performance in P3HT:PCBM organic bulk heterojunction solar cells

A numerical study on the relationship between the doping and performance in P3HT:PCBM organic bulk heterojunction solar cells

A model for studying the performance of P3HT:PCBM organic bulk heterojunction solar cells

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

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