“…Due to the potential application in semiconductor industry, the magnetic memories of monocrystalline silicon have attracted much attention. In present researches, it has been found that exposing silicon to a magnetic field at room temperature can increase the dislocation mobility in the subsequent high-temperature plastic deformation [11,12,19,20,43], while if expose silicon simultaneously to a magnetic field and a microwave satisfying the electron-paramagneticresonance conditions, the dislocation mobility in the subsequent high-temperature plastic deformation will decrease dramatically [14,15]. The researchers put forward that the residual influence of magnetic treatment on the dislocation mobility is due to that the magnetic field caused various changes to the point defects in the silicon crystal, thus affecting their hindrance to dislocation movement.…”