Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes

Li, Shuti; Wu, Qibao; Fan, Guanghan; Tianming, Zhou; Zhang, Yong; Yin, Yongsheng; He, Miao; Cao, Jianxing; Su, J.

doi:10.1088/0268-1242/24/8/085016

Cited by 12 publications

(6 citation statements)

References 18 publications

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“…[1][2][3] At present, the reproducible fabrication of stable, high-quality p-type ZnO is still a challenge, which hinders the development of ZnO-based homojunction LEDs. [4][5][6][7] An alternative approach is to fabricate heterojunction devices by using other available p-type materials, such as p-GaN, p-Si, p-NiO, p-type organics etc. [8][9][10][11][12][13][14][15] Among them, GaN has been considered as the most suitable one because of its similar energy band structure and small lattice mismatch with ZnO.…”

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confidence: 99%

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

Zhang

Liu

et al. 2016

AIP Advances

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n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ∼396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ∼1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ∼3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

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confidence: 99%

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

Zhang

Liu

et al. 2016

AIP Advances

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“…In recent years, Mg doped AlGaN/GaN SL has been experimentally shown to increase the free hole concentration [8]- [10]. In our former work, AlGaN/GaN and InGaN/GaN SLs were both found to contribute to improved performance of LEDs [11], [12]. In this letter, In 0.05 Ga 0.95 N/GaN hole gathering layer The widths of the SL wells and barriers were both 2nm.…”

Section: Introductionmentioning

confidence: 65%

Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Liu

Lü

et al. 2012

IEEE Photon. Technol. Lett.

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An InGaN/GaN superlattice (SL) with Mg-doped barriers was designed and inserted into the InGaN-based blue light-emitting diodes (LEDs) as a hole gathering layer (HGL) to promote hole injection into the active region. The fabricated LEDs with the SL HGL show 36.4% increase in light output power at an injection current of 200 mA. Meanwhile, the efficiency droop is also mitigated effectively, as compared to the traditional LEDs. The improved performance is attributed to increased hole injection efficiency and decreased electron leakage into the p-type region.

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“…(2)]. Finally, three-period p-InGaN (1 nm)/GaN (1 nm) short-period superlattice (SPS) were grown as contact layer [13]. Trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia (NH 3 ) were used as Ga, In, Al and N source, respectively.…”

Section: Methodsmentioning

confidence: 99%

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Xiang-Jing

Zhang

et al. 2014

J Mater Sci: Mater Electron

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The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N 2 ) as cyclopentadienyl magnesium (Cp 2 Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N 2 and the injection time of N 2 . Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current-voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

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Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes

Cited by 12 publications

References 18 publications

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

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