Influence des conditions de préparation sur les propriétés électriques des couches minces polycristallines de bismuth

Butto, C.; Berty, J.

doi:10.1016/0040-6090(85)90139-7

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…Изменение соотношения вкладов электронов и дырок в ряде работ связывают с нарушением равенства концентраций электронов и дырок в пленках [1][2][3], с поверхностными состояниями в пленке [4]. Ряд авторов связывают большое отрицательное значение коэффициента Холла в пленке с большой анизотропией эффекта Холла в висмуте и связанный с этим вклад компоненты R 321 блоков [5].…”

Section: Introductionunclassified

Эффекты Холла И Зеебека В Тонких Пленках Висмута На Подложке Из Слюды В Диапазоне Температур 77-300 K

Комаров¹,

Грабов²,

Суслов³

et al. 2019

Физика И Техника Полупроводников

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The effects of film thickness and block size on the Hall and Seebeck effects in bismuth films on mica substrates are analyzed using experimental data. A preferential decrease in the electron contribution with a decrease in the film thickness and a preferential decrease in the hole contribution with a decrease in the block size are established. The Hall and Seebeck coefficients are calculated using the classical size effect with regard to carrier scattering at block boundaries and anisotropy of the properties of carriers. In the calculation, the electron and hole mobility components and their concentration in a bismuth single crystal are used and the crystallographic orientation of the film crystal are taken into account. The results of the calculation are in good agreement with the experimental data. It is concluded that the value and sign of the Hall and Seebeck coefficients in bismuth films are determined by the competition of the classical size effect and scattering at block boundaries.

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Section: Introductionunclassified

Эффекты Холла И Зеебека В Тонких Пленках Висмута На Подложке Из Слюды В Диапазоне Температур 77-300 K

Комаров¹,

Грабов²,

Суслов³

et al. 2019

Физика И Техника Полупроводников

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Electrical and galvanomagnetic properties of undoped and doped polycrystalline bismuth films. I. Preparation and experimental characterization

Schnelle

Dillner

1989

Phys. Stat. Sol. (a)

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An investigation is made of the dependence of zero magnetic field resistivity as well as low m;ignetic field Hall and magnetoresistance coefficients of undoped as well as Te-, Sn-, and Ga-doped polycrystalline bismuth films on thickness and doping concentration in the temperature interval from 100 to 300 K. The films are deposited onto amorphous substrates by means of sirnultancous thermal cvaporation from two different sources for the host and dopant material, respectively. Doping does not alter the structure of the films significantly. The galvanomagnetic measurements are carried out using van der Pauw's technique with the magnetic ficld perpendicular to the film plane. Der spezifische Widerstand in Abwesenheit eines Magnetfeldes sowie die Hall-und Magnetowidcrstandskoeffizient,en im schwachen Magnetfeld von undotierten sowie von Te-, Sn-und Ga-dotierten polylrristallinen Wismutschichten werden in Abhangigkeit von der Schichtdicke und der Dotierungskonzentration bei Temperaturen zwischen 100 und 300 K untersucht. Die Beschichtung rrfolgt auf amorphen Substraten durch gleichzeitige thermische Verdampfung aus zwri unterschiedlichen Quellen ftir das Wirtsbzw. Dotierungsmaterinl. Die Dotierung veriindert die Schic1it.st,ruktur nicht signifikant. Die galvnnoniagnctischen Messungen werden mit der van der Panwschrn Methode in einem senkrecht zur Schichtebcne gerichteten Magnetfeld durchgefuhrt. Helmholtzweg 4, DDR-6900 Jena, GDR.

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Texture propriétés électriques de couches minces de bismuth dopé au plomb

Butto

Berty

1990

Thin Solid Films

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Influence des conditions de préparation sur les propriétés électriques des couches minces polycristallines de bismuth

Cited by 5 publications

References 8 publications

Эффекты Холла И Зеебека В Тонких Пленках Висмута На Подложке Из Слюды В Диапазоне Температур 77-300 K

Эффекты Холла И Зеебека В Тонких Пленках Висмута На Подложке Из Слюды В Диапазоне Температур 77-300 K

Electrical and galvanomagnetic properties of undoped and doped polycrystalline bismuth films. I. Preparation and experimental characterization

Texture propriétés électriques de couches minces de bismuth dopé au plomb

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