Infinite Selectivity of Wet SiO2 Etching in Respect to Al

Gablech, Imrich; Brodský, Jan; Pekárek, J; Neužil, Pavel

doi:10.3390/mi11040365

Cited by 4 publications

(3 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The proposed approach uses AZ resist as a sacrificial layer to suspend SU-8. The concept of using AZ resist as a sacrificial layer has already been demonstrated in previous studies [36][37][38][39]; here, DRIE was not used, which reduced the cost. In addition to the reports on the application of electroforming in sensors and electrical devices [38,39], methods of combining different resists have been reported [40].…”

Section: Introductionmentioning

confidence: 98%

“…Specifically, it is a method of manufacturing a cantilever shape and a structure of an electrostatic linear actuator without using DRIE. To date, the method of molding and etching a glass substrate has been presented for the purpose of producing a floating structure [33][34][35][36][37]. This differs from the proposed method such that it is completed only by the exposure and development process.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Research on fabrication method for floating structures using general photolithography with high versatility

Horade¹,

Yamada²,

Yamawaki³

et al. 2021

J. Micromech. Microeng.

View full text Add to dashboard Cite

This research reports a micro-fabrication method for plastic microscale structures. Although a stepped shape, such as a cantilever, can be fabricated by micro electro mechanical systems (MEMS) deep etching technology, its disadvantages include the complicated fabrication process and its limited utilization with silicon only. Therefore, in this study, with an aim to address the aforementioned problems, we have realized the fabrication of a multi-stage structure using just a general photolithography process with high versatility. Specifically, it can be manufactured using only SU-8 resist and AZ resist, which are often used in the MEMS process. The AZ resist has the advantage of dissolving in the developer of the SU-8 resist, whether exposed or non-exposed. Thus, the sacrificial layer of AZ resist can be implemented with the SU-8 developer, thereby eliminating the need for dangerous chemicals such as hydrofluoric acid, which is used to etch silicon oxide. Herein, we have derived the optimum conditions by considering in advance the thickness of the AZ resist, the time taken to be etched in SU-8, and the desired features. Based on these optimum processing conditions, the structure could be suspended only in the region where the hole array was patterned. Although methods of using AZ resist as a sacrificial layer and floating SU-8 have been reported, in this study, both floating and fixed structures could be simultaneously fabricated by photolithography only. Accordingly, we successfully manufactured a gear structure and a MEMS sensor, both of which have floating and fixed structures. The above structures are made of highly transparent SU-8 on a glass substrate; hence, they are easily observable with a microscope. The reason for the widespread use of polydimethylsiloxane micro-channels is that they are transparent materials that can be observed under a microscope and fabricated by simple photolithography of the SU-8 resist, enabling non-microfabrication specialists to enter this field. These findings have the potential to form the foundation for developing new biochemical tests, such as actuators and sensors driven under a microscope.

show abstract

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Research on fabrication method for floating structures using general photolithography with high versatility

Horade¹,

Yamada²,

Yamawaki³

et al. 2021

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…In modern resonator blanks manufacturing, some enterprises have used the wet etching process to replace the grinding and polishing process; they usually use NH 4 HF 2 or BOE solution as an etching solution, but the surface of the wafer after etching is prone to wrinkles, twill, and other defects, which affect the electrical properties of the resonator blanks [6].…”

Section: Introductionmentioning

confidence: 99%

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

et al. 2022

View full text Add to dashboard Cite

The quartz-crystal resonator is the core device for frequency control in modern communication systems and network technology. At present, in modern resonator blanks manufacturing, BOE solution is usually used as the etching solution, but its etching rate is relatively volatile, and the surface morphology of the blanks is prone to defects after etching, which brings certain difficulties to the deep-etching process of the wafer. To solve the above challenges, this paper systematically compares a BOE solution and anhydrous etching solution in terms of etching rate, surface morphology, and electrical properties of the blanks after etching. Seven groups of blanks were etched using different etching solutions with different etching conditions to verify their effect on the surface morphology and electrical properties of quartz blanks. The experimental results suggest that the application of anhydrous etching solution has achieved better surface morphology and electrical properties and can be more suitable for application in batch manufacturing. In general, when using anhydrous etching solution, it is possible to reduce surface roughness by up to 70% and equivalent resistance by 32%, and the etch rate is almost 10 times lower than BOE solution under the same temperature, which is more conducive to the rate control of wafers in the etching process.

show abstract

Silicon Nitride Integrated Photonics from Visible to Mid‐Infrared Spectra

Buzaverov,

Baburin,

Sergeev

et al. 2024

Laser & Photonics Reviews

View full text Add to dashboard Cite

Silicon nitride (Si3N4) photonic integrated circuits (PICs) are of great interest due to their extremely low propagation loss and higher integration capabilities. The number of applications based on the silicon nitride integrated photonics platform continues to grow, including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR), hybrid neuromorphic and quantum computing. It's potential for CMOS compatibility, as well as advances in heterogeneous integration with silicon‐on‐insulator, indium phosphate, and lithium niobate on insulator platforms, are leading to an advanced hybrid large‐scale PICs. Here, they review key trends in Si3N4 photonic integrated circuit technology and fill an information gap in the field of state‐of‐the‐art devices operating from the visible to the mid‐infrared spectrum. A comprehensive overview of its microfabrication process details (deposition, lithography, etching, etc.) is introduced. Finally, the limitations and challenges of silicon nitride photonics performance are pointed out in an ultra‐wideband, providing routes and prospects for its future scaling and optimization.

show abstract

Infinite Selectivity of Wet SiO2 Etching in Respect to Al

Cited by 4 publications

References 28 publications

Research on fabrication method for floating structures using general photolithography with high versatility

Research on fabrication method for floating structures using general photolithography with high versatility

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

Silicon Nitride Integrated Photonics from Visible to Mid‐Infrared Spectra

Contact Info

Product

Resources

About