Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

We have studied the quantum fluctuations of inelastic spin-electron scattering in quantum dot with an embedded biaxial single molecule-magnet and particularly investigated the zero-frequency shot noise and Fano factor in different magnetic fields. It is found that the shot noise and Fano factor exhibit a stepwise behaviour as bias increases in the presence of interaction between the electron and molecule-magnet for a weak magnetic field. As magnetic field becomes strong, a dip is displayed in the shot-noise-bias curve due to the suppression of inelastic shot noise caused by the quantum tunneling of magnetisation. Because of the spontaneous inelastic tunneling at zero bias, a small shot noise occurs, which results in the case of Fano factor F ≫ 1. Moreover, our results show that the sweeping speed can also influence the shot noise and Fano factor obviously.

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Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

Cited by 3 publications

References 36 publications

Macroscopic quantum coherence in a single molecular magnet and Kondo effect of electron transport

Macroscopic quantum coherence in a single molecular magnet and Kondo effect of electron transport

Quantum transport through anisotropic molecular magnets: Hubbard Green function approach

Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

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