2004
DOI: 10.1103/physrevlett.93.266802
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Inelastic Electron Tunneling via Molecular Vibrations in Single-Molecule Transistors

Abstract: In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification o… Show more

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Cited by 316 publications
(304 citation statements)
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“…34 A more detailed understanding of the line shape is needed to be able to assign features in the current-voltage characteristics to vibrational modes of the molecule. Such studies should include the dependence of the vibrational energy on the gate voltage 32 and possibly on the charge state and the environment.…”
Section: Molecular Junctions With Opv-3mentioning
confidence: 99%
“…34 A more detailed understanding of the line shape is needed to be able to assign features in the current-voltage characteristics to vibrational modes of the molecule. Such studies should include the dependence of the vibrational energy on the gate voltage 32 and possibly on the charge state and the environment.…”
Section: Molecular Junctions With Opv-3mentioning
confidence: 99%
“…The third electrode can bring molecular levels into and out of resonance with the Fermi energy of the electrodes probing excited states and allowing different charge states to be accessed. Excited states can either be vibrational [10][11][12], electronic [13] or related to spin transitions [14,15]. These excitations serve as a fingerprint of the molecule under study.…”
Section: Introductionmentioning
confidence: 99%
“…Quantum dot devices are usually made of a nanostructure or a molecule coupled to leads [1,2,3]. A vast amount of experiments have been performed using quantum dots, where with bias spectroscopy [4] or thermoelectric measurements [5], it is possible to obtain the energy level structure of the quantum dot, which is important for understanding and predicting the device behavior.…”
Section: Introductionmentioning
confidence: 99%